| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG2015EA115NOW NEXPERIA PMEG2015EA RECTIFIE Rochester Electronics, LLC |
3,388 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 5V, 1MHz | - | 50 µA @ 15 V | 20 V | 1.5A (DC) | -65°C ~ 125°C | 660 mV @ 1.5 A | |
|
85HF20DO5 85 AMP SILICON RECTFIER KK Solid State Inc. |
3,039 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 200 µA @ 200 V | 200 V | 85A | -65°C ~ 150°C | 1.3 V @ 85 A | |
|
1N4148,133DIODE GEN PURP 100V 200MA ALF2 NXP USA Inc. |
12,925,300 | - |
RFQ |
Datasheet |
Cut Tape (CT),Bulk,Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 25 nA @ 20 V | 100 V | 200mA (DC) | - | 1 V @ 10 mA | |
|
SS36B-F1-0000HFDIODE SCHOTTKY 60V 3A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,031 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A | |
|
UES2602RRECTIFIER Microchip Technology |
3,953 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 20 µA @ 100 V | 100 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
IRD3900DIODE GEN PURP 100V 20A DO203AB Vishay General Semiconductor - Diodes Division |
2,037 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 50 µA @ 100 V | 100 V | 20A | -40°C ~ 125°C | 1.65 V @ 62.8 A | |
|
1N248RCDO5 20 AMP SILICON RECTIFIER Solid State Inc. |
3,177 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 50 V | 50 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
1N1670DO9 275 AMP SILICON RECTIFIER Solid State Inc. |
3,092 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 75 µA @ 50 V | 50 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A | |
|
UES2603RRECTIFIER Microchip Technology |
2,023 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 20 µA @ 150 V | 150 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
S2DRECTIFIER DIODE, 2A, 200V, DO-21 Rochester Electronics, LLC |
3,351 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 200 V | 200 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |
|
1N1188DO5 35 AMP SILICON RECTFIER Solid State Inc. |
2,583 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 400 V | 400 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | |
|
85HF140DO5 85 AMP SILICON RECTFIER KK Solid State Inc. |
3,478 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 200 µA @ 1400 V | 1400 V | 85A | -65°C ~ 150°C | 1.3 V @ 85 A | |
|
UES2604RRECTIFIER Microchip Technology |
2,848 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 30A | -55°C ~ 150°C | 1.25 V @ 15 A | |
|
1N4148,113DIODE GEN PURP 100V 200MA ALF2 NXP USA Inc. |
2,772,103 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 25 nA @ 20 V | 100 V | 200mA (DC) | 200°C (Max) | 1 V @ 10 mA | |
|
1N3209RDO5 40 AMP SILICON RECTFIER Solid State Inc. |
2,489 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
SS54B-F1-0000HFDIODE SCHOTTKY 40V 5A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,337 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 125°C | 600 mV @ 5 A | |
|
UES2605RRECTIFIER Microchip Technology |
3,901 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 50 ns | 50 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.25 V @ 15 A | |
|
IRD3901DIODE GEN PURP 200V 20A DO203AB Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 50 µA @ 200 V | 200 V | 20A | -40°C ~ 125°C | 1.65 V @ 62.8 A | |
|
1N3208RDO5 40 AMP SILICON RECTFIER Solid State Inc. |
2,039 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 50 V | 50 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
1N1664DO9 275 AMP SILICON RECTIFIER Solid State Inc. |
3,238 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 75 µA @ 300 V | 300 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A |