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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S300DDIODE GEN PURP 200V 300A DO205AB GeneSiC Semiconductor |
2,456 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 300A | -60°C ~ 200°C | 1.2 V @ 300 A | |
|
1N3210RDO5 40 AMP SILICON RECTFIER Solid State Inc. |
3,941 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 200 V | 200 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
S300DRDIODE GEN PURP 200V 300A DO9 GeneSiC Semiconductor |
2,339 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 300A | -60°C ~ 200°C | 1.2 V @ 300 A | |
|
|
1N2159RDO5 40 AMP SILICON RECTFIER Solid State Inc. |
3,871 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 500 V | 500 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
S300EDIODE GEN PURP 300V 300A DO205AB GeneSiC Semiconductor |
2,340 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 300 V | 300A | -60°C ~ 200°C | 1.2 V @ 300 A | |
|
|
1N2286RDO5 40 AMP SILICON RECTFIER Solid State Inc. |
2,085 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 800 V | 800 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
S300ERDIODE GEN PURP 300V 300A DO9 GeneSiC Semiconductor |
3,406 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 300 V | 300A | -60°C ~ 200°C | 1.2 V @ 300 A | |
|
|
1N3765DO5 40 AMP SILICON RECTFIER Solid State Inc. |
2,774 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 700 V | 700 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
S300GDIODE GEN PURP 400V 300A DO205AB GeneSiC Semiconductor |
3,654 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 400 V | 300A | -60°C ~ 200°C | 1.2 V @ 300 A | |
|
BAW56/LF1215RECTIFIER DIODE Rochester Electronics, LLC |
3,677 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
PMEG2010EAZPMEG2010EA - 20 V, 1 A LOW VF (M Rochester Electronics, LLC |
2,884 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 19pF @ 5V, 1MHz | - | 50 µA @ 15 V | 20 V | 1A (DC) | 125°C (Max) | 550 mV @ 1 A | |
|
UES1301G-4 6 AMP HIGH EFFICIENCY RECTI Solid State Inc. |
2,157 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 175°C | 925 mV @ 6 A | |
|
SR2200-D1-0000DIODE SCHOTTKY 200V 2A DO204AC Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,132 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 4V, 1MHz | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
LSIC2SD120E20CCSCHOTTKY DIODE SIC 1200V 20A Littelfuse Inc. |
118 | - |
RFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 582pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
BYV29-500,127DIODE GEN PURP 500V 9A TO220AC WeEn Semiconductors |
4,999 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
SE30AFJHM3/6ADIODE GEN PURP 600V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
64,655 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
|
SR4260RLREC SURM SPECIAL TR Rochester Electronics, LLC |
220,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
S85QDIODE GEN PURP 1.2KV 85A DO5 GeneSiC Semiconductor |
159 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1200 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
SF68GDIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation |
2,302 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1.7 V @ 6 A | |
|
RR1LAM6STRDIODE GEN PURP 600V 1A PMDTM Rohm Semiconductor |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 1A | 150°C (Max) | 1.1 V @ 1 A |
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