| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1JMHRSGDIODE GEN PURP 600V 1A MICRO SMA Taiwan Semiconductor Corporation |
18,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
CDBQR0130RDIODE SCHOTTKY 30V 100MA 0402 Comchip Technology |
1,382,644 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 500 nA @ 10 V | 30 V | 100mA | 125°C (Max) | 450 mV @ 10 mA | |
|
HSB124S-JTL-EDIODE FOR HIGH SPEED SWITCHING Rochester Electronics, LLC |
63,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N4936400 V, 1.0 A FAST RECOVERY Rochester Electronics, LLC |
32,700 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
BAV101SF Rect, 110V, 0.20A, 50ns DComponents |
3,412 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 100 V | 100 V | 200mA | -50°C ~ 175°C | 1.25 V @ 200 mA | |
|
JANTX1N3890RDIODE GEN PURP 100V 12A DO203AA Microchip Technology |
2,259 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/304 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 115pF @ 10V, 1MHz | 200 ns | 10 µA @ 100 V | 100 V | 12A | -65°C ~ 175°C | 1.5 V @ 20 A |
|
10ETS12STRRDIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
JANTX1N3891RRECTIFIER Microchip Technology |
2,190 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/304 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 115pF @ 10V, 1MHz | 200 ns | 10 µA @ 200 V | 200 V | 12A | -65°C ~ 175°C | 1.5 V @ 38 A | |
|
10TQ035STRLDIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,369 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
20ETF02SDIODE GEN PURP 200V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,933 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 160 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
RL207-TDIODE GEN PURP 1KV 2A DO15 Diodes Incorporated |
2,429 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 1000 V | 1000 V | 2A | -65°C ~ 150°C | 1 V @ 2 A | |
|
JANTX1N3890ARRECTIFIER Microchip Technology |
3,277 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/304 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 115pF @ 10V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 20A | -65°C ~ 175°C | 1.5 V @ 20 A | |
|
10TQ035STRRDIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,279 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
JANTX1N3891ARRECTIFIER Microchip Technology |
2,562 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/304 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 115pF @ 10V, 1MHz | 150 ns | - | 200 V | 20A | -65°C ~ 175°C | 1.5 V @ 38 A | |
|
10TQ045STRLDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,973 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
JANTX1N3893ARRECTIFIER Microchip Technology |
3,179 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/304 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 115pF @ 10V, 1MHz | 150 ns | - | 400 V | 20A | -65°C ~ 175°C | 1.5 V @ 38 A | |
|
SS220-F1-0000HFDIODE SCHOTTKY 200V 2A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,344 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
30EPF02DIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
10TQ045STRRDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,976 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
150KS5DIODE GEN PURP 50V 150A B42 Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | - | 35 mA @ 50 V | 50 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A |