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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
20ETF10STRRDIODE GEN PURP 1KV 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
UF4002-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
8,907 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
GD25MPS17H1700V 25A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor |
378 | - |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.083nF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A |
|
SD103AWS-TPDIODE SCHOTTKY 40V 350MA SOD323 Micro Commercial Co |
307,268 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA | -65°C ~ 125°C | 600 mV @ 200 mA | |
|
RKH0160AKU-3#P6DIODE FOR HIGH VOLTAGE SWITCHING Rochester Electronics, LLC |
40,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
PMEG4010EGW115RECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
3,702 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SE20AFJHM3/6ADIODE GEN PURP 600V 2A DO221AC Vishay General Semiconductor - Diodes Division |
5,338 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 2A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
UJ3D06560KSD650V 60A SIC SCHOTTKY DIODE G3, UnitedSiC |
414 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1980pF @ 1V, 1MHz | 0 ns | 740 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A | |
|
S1AB-13-FDIODE GEN PURP 50V 1A SMB Diodes Incorporated |
244,317 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 3 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
HVC190KRF-EDIODE FOR ATTENUATOR Rochester Electronics, LLC |
40,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N4001-TDIODE GEN PURP 50V 1A DO-41 Rectron USA |
40,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 200 nA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
CMUSH2-4 TR PBFREEDIODE SCHOTTKY 40V 200MA SOT523 Central Semiconductor Corp |
2,940 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 40 V | 200mA | -65°C ~ 150°C | 750 mV @ 100 mA | |
|
VS-T40HF10DIODE GEN PURP 100V 40A D-55 Vishay General Semiconductor - Diodes Division |
184 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 100 V | 100 V | 40A | - | - | |
|
B0520LW-7-FDIODE SCHOTTKY 20V 500MA SOD123 Diodes Incorporated |
10,401 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 250 µA @ 20 V | 20 V | 500mA | -65°C ~ 125°C | 385 mV @ 500 mA | |
|
|
HSB2836TL-EDIODE FOR HIGH SPEED SWITCHING Rochester Electronics, LLC |
39,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N4001SDIODE STD DO-41 50V 1A Diotec Semiconductor |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
PMEG2010ET,215DIODE SCHOTTKY 20V 1A TO236AB Nexperia USA Inc. |
6,203 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 1V, 1MHz | - | 200 µA @ 20 V | 20 V | 1A (DC) | 150°C (Max) | 500 mV @ 1 A | |
|
MSC050SDA120BCTSIC SBD 1200 V 50 A TO-247 Microchip Technology |
235 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 246pF @ 400V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 109A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |
|
RB161QS-40T18RDIODE SCHOTTKY 40V 1A SMD1006 Rohm Semiconductor |
432,953 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 10 V | 40 V | 1A | 150°C (Max) | 600 mV @ 1 A | |
|
HSM2836C91TR-EDIODE FOR HIGH SPEED SWITCHING Rochester Electronics, LLC |
39,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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