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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB60-05JRECTIFIER DIODE, SCHOTTKY, 1 PHA Rochester Electronics, LLC |
2,503 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
STPS2L40AFN40 V, 2 A LOW DROP POWER SCHOTTK STMicroelectronics |
2,357 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 220 µA @ 40 V | 40 V | 2A | 150°C | 430 mV @ 2 A | |
|
BR215_R1_00001SMA, SKY Panjit International Inc. |
1,603 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
1N5401-GDIODE GEN PURP 100V 3A DO201AD Comchip Technology |
2,741 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 125°C | 950 mV @ 3 A | |
|
SS2040FL_R1_00001SOD-123FL, SKY Panjit International Inc. |
16,266 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 2A | -50°C ~ 150°C | 500 mV @ 2 A | |
|
|
1N5404-GDIODE GEN PURP 400V 3A DO201AD Comchip Technology |
2,637 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 125°C | 950 mV @ 3 A | |
|
S1J-Q-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
487,500 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
US1J-E3/61TDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,960 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
S1M-Q-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
135,000 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
US1K-E3/61TDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
1,714 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
V20120SG-M3/4WDIODE SCHOTTKY 20A 120V TO-220AB Vishay General Semiconductor - Diodes Division |
3,610 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
S6KDIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor |
3,038 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
FFSP1265ADIODE SCHOTTKY 650V 15A TO220-2L Rochester Electronics, LLC |
2,319 | - |
RFQ |
Datasheet |
Bulk,Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 665pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 15A (DC) | -55°C ~ 175°C | 1.75 V @ 12 A | |
|
VS-10TQ040-M3DIODE SCHOTTKY 40V 10A TO-220AC Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 10A | -55°C ~ 175°C | 670 mV @ 20 A | |
|
APT15D60BGDIODE GEN PURP 600V 15A TO247 Microchip Technology |
2,699 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 150 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | |
|
|
JANTX1N5415DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
2,407 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
VB10150S-E3/8WDIODE SCHOTTKY 150V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,939 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
|
|
S6KRDIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
2,471 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 800 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
FFSB1265ADIODE SBD 12A 650V D2PAK-3 onsemi |
2,541 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 665pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 14A (DC) | -65°C ~ 175°C | 1.75 V @ 12 A | |
|
|
FCF06A40DIODE FAST RECOVERY 400V 6A TO-2 KYOCERA AVX |
3,290 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 6A | -40°C ~ 150°C | 1.25 V @ 3 A |
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