| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PT800G-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
3,309 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 400 V | 400 V | 8A | -50°C ~ 150°C | 1.1 V @ 8 A | |
|
|
1SS244T-77DIODE GEN PURP 220V 200MA MSD Rohm Semiconductor |
3,936 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 3pF @ 0V, 1MHz | 75 ns | 10 µA @ 220 V | 220 V | 200mA | 175°C (Max) | 1.5 V @ 200 mA | |
|
1N4587DO8 150 AMP SILICON RECTIFIER Solid State Inc. |
3,754 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 100 V | 100 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | |
|
BYW4200B-TRDIODE GEN PURP 200V 4A DPAK STMicroelectronics |
2,961 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 4A | 150°C (Max) | 1.25 V @ 12 A | |
|
IV1D06006O2SIC DIODE, 650V 6A, TO-220-2 Inventchip |
200 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 212pF @ 1V, 1MHz | 0 ns | 10 µA @ 650 V | 650 V | 17.4A (DC) | -55°C ~ 175°C | 1.65 V @ 6 A | |
|
FES16GT/45DIODE GEN PURP 400V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,543 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A | |
|
|
RB441Q-40T-77DIODE SCHOTTKY 40V 100MA MSD Rohm Semiconductor |
2,831 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 6pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 100mA | 125°C (Max) | 550 mV @ 100 mA | |
|
1N411RBDO8 100 AMP SILICON RECTIFIER Solid State Inc. |
3,526 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 50 V | 50 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
BYW77G-200-TRDIODE GEN PURP 200V 25A D2PAK STMicroelectronics |
3,137 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 25 µA @ 200 V | 200 V | 25A | -40°C ~ 150°C | 1.15 V @ 40 A | |
|
KYW25K6Std Recovery Diode, 600V, 25A DComponents |
3,106 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 100 µA @ 600 V | 600 V | 25A | -50°C ~ 175°C | 1.1 V @ 25 A | |
|
|
FES8DT/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,118 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | ||
|
|
RB721Q-40T-77DIODE SCHOTTKY 40V 30MA MSD Rohm Semiconductor |
3,273 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 2pF @ 1V, 1MHz | - | 500 nA @ 25 V | 40 V | 30mA | 125°C (Max) | 370 mV @ 1 mA | |
|
1N2439DO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,010 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 200 V | 200 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | |
|
10BQ040TRDIODE SCHOTTKY 40V 1A SMB Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 530 mV @ 1 A | |
|
ESH2PB-E3/85ADIODE GEN PURP 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,692 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
10BQ060DIODE SCHOTTKY 60V 1A SMB Vishay General Semiconductor - Diodes Division |
2,525 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 62pF @ 5V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 600 mV @ 1 A | |
|
ESH2PBHE3/85ADIODE GEN PURP 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,547 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
10BQ060TRDIODE SCHOTTKY 60V 1A SMB Vishay General Semiconductor - Diodes Division |
3,159 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 62pF @ 5V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 600 mV @ 1 A | |
|
ESH2PC-E3/85ADIODE GEN PURP 150V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,157 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
10BQ100TRDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 780 mV @ 1 A |