| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4006DIODE GEN PURP 800V 1A DO41 Micro Commercial Co |
3,199 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
FR3KDIODE FR SMC 800V 3A Diotec Semiconductor |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.3 V @ 3 A | |
|
FFB05U120STMDIODE GEN PURP 1.2KV 5A TO263AB onsemi |
3,303 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 100 ns | 5 µA @ 1200 V | 1200 V | 5A | -65°C ~ 150°C | 3.5 V @ 5 A | |
|
|
RS1KL R3GDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
4,149 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
ES1DFS M3G35NS, 1A, 200V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SB520-E3/51DIODE SCHOTTKY 20V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,917 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
MMBD1701DIODE GEN PURP 30V 50MA SOT23-3 onsemi |
2,674 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 1pF @ 0V, 1MHz | 700 ps | 50 nA @ 20 V | 30 V | 50mA | 150°C (Max) | 1.1 V @ 50 mA | |
|
BAS16_S00ZDIODE GEN PURP 85V 200MA SOT23-3 onsemi |
2,620 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 85 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
RB056LAM-40TRDIODE SCHOTTKY 40V 3A PMDTM Rohm Semiconductor |
700 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 40 V | 40 V | 3A | 150°C (Max) | 670 mV @ 3 A | |
|
GI754R- 400 PRV 6A NTE Electronics, Inc |
1,424 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 400 V | 400 V | 6A | -65°C ~ 175°C | 900 mV @ 6 A | |
|
20SQ045-3GSCHOTTKY DO-201 45V 20A Diotec Semiconductor |
1,250 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 45 V | 45 V | 20A | -50°C ~ 150°C | 550 mV @ 20 A | |
|
|
PU3BAH25NS, 3A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
13,835 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
|
BY252P-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,647 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
ES1BAL M3G35NS, 1A, 100V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
3,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
RGP10KDIODE GEN PURP 800V 1A DO41 onsemi |
3,575 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
SFF1005G C0GDIODE GEN PURP 300V 10A ITO220AB Taiwan Semiconductor Corporation |
2,717 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
80SQ05SCHOTTKY D5.4X7.5 50V 8A Diotec Semiconductor |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -50°C ~ 150°C | 550 mV @ 8 A | |
|
|
PU3DAH25NS, 3A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
22,424 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
|
BY251P-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,075 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
ES1BFS M3G35NS, 1A, 100V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
3,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |