| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTE109D-GE-GEN PURP 75V NTE Electronics, Inc |
6,066 | - |
RFQ |
Datasheet |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 0.8pF @ 1V, 1MHz | - | 100 µA @ 50 V | 100 V | 40mA | -65°C ~ 90°C | 1 V @ 200 mA | |
|
RGP15G-E3/54DIODE GEN PURP 400V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
1,798 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
|
US1M R3GDIODE GEN PURP 1KV 1A DO214AC Taiwan Semiconductor Corporation |
25,105 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
RS1A-E3/61TDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
5,321 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
TPAR3D S1GDIODE AVALANCHE 200V 3A TO277A Taiwan Semiconductor Corporation |
8,989 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 58pF @ 4V, 1MHz | 120 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.55 V @ 3 A | |
|
|
ES1F R3GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
2,835 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
RURG3050RECTIFIER DIODE Rochester Electronics, LLC |
589 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 60 ns | 500 µA @ 500 V | 500 V | 30A | -65°C ~ 175°C | 1.5 V @ 30 A | |
|
RGP15M-E3/54DIODE GEN PURP 1KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
6,725 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
HS2JAL M3G75NS, 2A, 600V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 75 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | ||
|
UF4002-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
21,781 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
1N5060R-400PRV 1A NTE Electronics, Inc |
1,507 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
SJPB-H4VRDIODE SCHOTTKY 40V 2A SJP Sanken |
2,428 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
|
DURF840DIODE GEN PURP 400V 8A ITO220AC Littelfuse Inc. |
20,000 | - |
RFQ |
Datasheet |
Tube | DUR | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SJPB-H6VRDIODE SCHOTTKY 60V 2A SJP Sanken |
3,336 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 690 mV @ 2 A | |
|
HS2GAL M3G50NS, 2A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 50 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
CSFA101-GDIODE GEN PURP 50V 1A DO214AC Comchip Technology |
3,770 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 1A | 150°C (Max) | 950 mV @ 1 A | |
|
SDMP0340LT-7-FDIODE SCHOTTKY 40V 30MA SOT523 Diodes Incorporated |
2,245 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 1V, 1MHz | - | 1 µA @ 10 V | 40 V | 30mA (DC) | -40°C ~ 125°C | 370 mV @ 1 mA | |
|
MA3X028TALDIODE GEN PURP 6V 70MA MINI3 Panasonic Electronic Components |
2,676 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | - | - | 1 µA @ 6 V | 6 V | 70mA (DC) | 125°C (Max) | 1.92 V @ 3 mA | |
|
15SQ045-3GSCHOTTKY D5.4X7.5 45V 15A Diotec Semiconductor |
1,250 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 45 V | 45 V | 15A | -50°C ~ 150°C | 530 mV @ 15 A | |
|
CURM101-GDIODE GEN PURP 50V 1A MINISMA Comchip Technology |
2,068 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A |