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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK34A R3GDIODE SCHOTTKY 40V 3A DO214AC Taiwan Semiconductor Corporation |
15,660 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A | |
|
FSM14PL-TPDIODE GEN PURP 400V 1A SOD123FL Micro Commercial Co |
4,248 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
DSEP29-06BSDIODE GEN PURP 600V 30A TO263 IXYS |
3,912 | - |
RFQ |
Tape & Reel (TR) | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 250 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.52 V @ 30 A | |
|
|
DNA30E2200PC-TUBDIODE GEN PURP 2.2KV 30A TO263 IXYS |
2,145 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 700V, 1MHz | - | 40 µA @ 2200 V | 2200 V | 30A | -55°C ~ 175°C | 1.26 V @ 30 A | |
|
DSEP30-03ADIODE GEN PURP 300V 30A TO247AD IXYS |
2,991 | - |
RFQ |
Datasheet |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | 250 µA @ 300 V | 300 V | 30A | -55°C ~ 175°C | 1.55 V @ 30 A |
|
|
DNA30EM2200PCDIODE GEN PURP 2.2KV 30A TO263 IXYS |
2,519 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 700V, 1MHz | - | 40 µA @ 2200 V | 2200 V | 30A | -55°C ~ 175°C | 1.26 V @ 30 A | |
|
|
DSEP30-04ADIODE GEN PURP 400V 30A TO247AD IXYS |
3,624 | - |
RFQ |
Datasheet |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 250 µA @ 400 V | 400 V | 30A | -55°C ~ 175°C | 1.46 V @ 30 A |
|
TRS6E65C,S1AQDIODE SCHOTTKY 650V 6A TO220-2L Toshiba Semiconductor and Storage |
2,562 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 35pF @ 650V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 6A (DC) | 175°C (Max) | 1.7 V @ 6 A | |
|
DSEP30-06CRDIODE GP 600V 30A ISOPLUS247 IXYS |
3,939 | - |
RFQ |
Datasheet |
Tube | HiPerDynFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 15 ns | 250 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 3.07 V @ 30 A |
|
MR856RLGDIODE GEN PURP 600V 3A DO201AD onsemi |
3,652 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 125°C | 1.25 V @ 3 A | |
|
TRS8E65C,S1QDIODE SCHOTTKY 650V 8A TO220-2L Toshiba Semiconductor and Storage |
2,008 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 44pF @ 650V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 8A (DC) | 175°C (Max) | 1.7 V @ 8 A | |
|
|
DSEP60-025ADIODE GEN PURP 250V 60A TO247AD IXYS |
2,221 | - |
RFQ |
Datasheet |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 650 µA @ 250 V | 250 V | 60A | -55°C ~ 175°C | 1.31 V @ 60 A |
|
S2G-TPDIODE GEN PURP 400V 2A DO214AA Micro Commercial Co |
2,243 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
TRS12E65C,S1QDIODE SCHOTTKY 650V 12A TO220-2L Toshiba Semiconductor and Storage |
3,084 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 65pF @ 650V, 1MHz | 0 ns | 90 µA @ 170 V | 650 V | 12A (DC) | 175°C (Max) | 1.7 V @ 12 A | |
|
HER604-TDIODE GEN PURP 300V 6A R6 Diodes Incorporated |
2,260 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 300 V | 300 V | 6A | -65°C ~ 150°C | 1.2 V @ 6 A | |
|
DSEP60-03ADIODE GEN PURP 300V 60A TO247 IXYS |
2,758 | - |
RFQ |
Datasheet |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 650 µA @ 300 V | 300 V | 60A | -55°C ~ 175°C | 1.71 V @ 60 A |
|
|
SMB5817DIODE SCHOTTKY 20V 1A DO214AA Micro Commercial Co |
2,572 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | ||
|
JAN1N5618USDIODE GEN PURP 600V 1A D5A Microchip Technology |
2,537 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
1N4448_T50ADIODE GEN PURP 100V 200MA DO35 onsemi |
2,080 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
SB530-TDIODE SCHOTTKY 30V 5A DO201AD Diodes Incorporated |
2,684 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A | -65°C ~ 125°C | 550 mV @ 5 A |
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