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Memory
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | MemoryType | MemoryFormat | Technology | MemorySize | MemoryInterface | ClockFrequency | WriteCycleTime-WordPage | AccessTime | Voltage-Supply | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MT48LC4M16A2P-6A IT:JIC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. |
3,001 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 167 MHz | 12ns | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
MT48LC4M16A2P-7E AIT:JIC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. |
3,578 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q100 | Obsolete | Volatile | DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 143 MHz | 14ns | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
MT48LC4M16A2P-7E IT:JIC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. |
2,884 | - |
RFQ |
Datasheet |
Bulk | - | Obsolete | Volatile | DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 133 MHz | 14ns | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
MT48LC4M16A2P-7E:JIC DRAM 64MBIT PAR 54TSOP II Micron Technology Inc. |
3,687 | - |
RFQ |
Datasheet |
Bulk | - | Obsolete | Volatile | DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 133 MHz | 14ns | 5.4 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount |
|
MT48LC4M32B2B5-6A AIT:LIC DRAM 128MBIT PARALLEL 90VFBGA Micron Technology Inc. |
3,784 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q100 | Obsolete | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 167 MHz | 12ns | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount |
|
71V67703S85BQIIC SRAM 9MBIT PARALLEL 165CABGA IDT, Integrated Device Technology Inc |
3,933 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 87 MHz | - | 8.5 ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount |
|
CY7C1298F-133ACSTANDARD SRAM, 64KX18, 4NS, CMOS Cypress Semiconductor Corp |
575 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
71V67903S75PFGIIC SRAM 9MBIT PARALLEL 100TQFP IDT, Integrated Device Technology Inc |
3,974 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117 MHz | - | 7.5 ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount |
|
7164L70TDBIC SRAM 64KBIT PARALLEL 28CDIP IDT, Integrated Device Technology Inc |
177 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
|
|
7164L20TDBIC SRAM 64KBIT PARALLEL 28CDIP IDT, Integrated Device Technology Inc |
3,959 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 20ns | 20 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
|
CY14B101LL-SP25XCNON-VOLATILE SRAM, 128KX8, 25NS Cypress Semiconductor Corp |
285 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
7164S35DBIC SRAM 64KBIT PARALLEL 28CERDIP IDT, Integrated Device Technology Inc |
2,254 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 35ns | 35 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
|
|
7164S55TDBIC SRAM 64KBIT PARALLEL 28CDIP IDT, Integrated Device Technology Inc |
3,334 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
|
71V67803S166PFGIC SRAM 9MBIT PARALLEL 100TQFP IDT, Integrated Device Technology Inc |
2,736 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 166 MHz | - | 3.5 ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount |
|
MT57V512H36EF-5DDR SRAM, 512KX36, 2.4NS, CMOS Micron Technology Inc. |
269 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
MT58V512V36DF-7.5CACHE SRAM, 512KX36, 4NS, CMOS Micron Technology Inc. |
2,290 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
MT58V512V36FF-7.5CACHE SRAM, 512KX36, 7.5NS, CMOS Micron Technology Inc. |
2,264 | - |
RFQ |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
EM6HF16EBXB-12SH8GB (512MX16) DDR3. 96-BALL WIND Etron Technology, Inc. |
100 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
71256S25DBIC SRAM 256KBIT PAR 28CERDIP IDT, Integrated Device Technology Inc |
2,621 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 25ns | 25 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
|
|
71256S35DBIC SRAM 256KBIT PAR 28CERDIP IDT, Integrated Device Technology Inc |
3,707 | - |
RFQ |
Datasheet |
Bulk | - | Active | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole |
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