Memory

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
DS1961S-F5 Analog Devices Inc./Maxim Integrated Memory

DS1961S-F5

1KBIT EEPROM IBUTTON WITH SHA-1

Analog Devices Inc./Maxim Integrated
3,675 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
R1RW0416DSB-0PR#D0 Renesas Electronics America Inc Memory

R1RW0416DSB-0PR#D0

STANDARD SRAM, 256KX16

Renesas Electronics America Inc
2,881 -

RFQ

Bulk * Active - - - - - - - - - - -
S29GL064N90FFI040A Spansion Memory

S29GL064N90FFI040A

IC FLASH 64MBIT PARALLEL 64FBGA

Spansion
3,379 -

RFQ

FudongIC

Datasheet

Bulk GL-N Active Non-Volatile FLASH FLASH - NOR 64Mb (8M x 8, 4M x 16) Parallel - 90ns 90 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
NM93C46AEN Fairchild Semiconductor Memory

NM93C46AEN

EEPROM, 64X16, SERIAL PDIP8

Fairchild Semiconductor
2,251 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 1Kb (128 x 8, 64 x 16) SPI 1 MHz 10ms - 4.5V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
S40410081B1B1W000Z Cypress Semiconductor Corp Memory

S40410081B1B1W000Z

FLASH

Cypress Semiconductor Corp
3,121 -

RFQ

Bulk * Active - - - - - - - - - - -
TMS2114L-25NL Texas Instruments Memory

TMS2114L-25NL

STANDARD SRAM, 1KX4

Texas Instruments
2,849 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
NM93C46ALMT8 Fairchild Semiconductor Memory

NM93C46ALMT8

EEPROM, 64X16, SERIAL, CMOS

Fairchild Semiconductor
2,884 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 1Kb (128 x 8, 64 x 16) SPI 250 kHz 15ms - 2.7V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
X28C513JZ-12 Intersil Memory

X28C513JZ-12

EEPROM, 64KX8, 5V, PARALLEL

Intersil
3,871 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 512Kb (64K x 8) Parallel - 10ms 120 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
MT58L256L32FT-8.5IT Micron Technology Inc. Memory

MT58L256L32FT-8.5IT

CACHE SRAM, 256KX32, 8.5NS

Micron Technology Inc.
2,706 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
R1WV3216RSD-7SR#B0 Renesas Electronics America Inc Memory

R1WV3216RSD-7SR#B0

32MB SUPERSRAM (2M X16-BIT)

Renesas Electronics America Inc
3,914 -

RFQ

Bulk * Active - - - - - - - - - - -
NM93C56LZEN Fairchild Semiconductor Memory

NM93C56LZEN

EEPROM, 128X16, SERIAL PDIP8

Fairchild Semiconductor
3,453 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 2Kb (128 x 16) SPI 250 kHz 15ms - 2.7V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
N04L163WC2AT27I onsemi Memory

N04L163WC2AT27I

4MB LOW POWER ASYNCHRONOUS SRAM

onsemi
3,525 -

RFQ

Bulk * Active - - - - - - - - - - -
X28C010DMB-12 Intersil Memory

X28C010DMB-12

EEPROM, 128KX8, PARALLEL

Intersil
3,265 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 1Mb (128K x 8) Parallel - 10ms 120 ns 4.5V ~ 5.5V -55°C ~ 125°C Through Hole
X24645S8 Intersil Memory

X24645S8

EEPROM, 8KX8, SERIAL, CMOS

Intersil
3,748 -

RFQ

Bulk * Active - - - - - - - - - - -
X28HC256FMB-15 Intersil Memory

X28HC256FMB-15

EEPROM, 32KX8, 5V, PARALLEL

Intersil
2,947 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
R1RW0404DGE-2PR#B0 Renesas Electronics America Inc Memory

R1RW0404DGE-2PR#B0

4M HIGH SPEED SRAM (1M X 4-BIT)

Renesas Electronics America Inc
3,492 -

RFQ

Bulk * Active - - - - - - - - - - -
X28HC256J-90C7168 Intersil Memory

X28HC256J-90C7168

EEPROM, 32KX8, 5V, PARALLEL

Intersil
2,618 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
CY7C167A-35VC Cypress Semiconductor Corp Memory

CY7C167A-35VC

STANDARD SRAM, 16KX1, 35NS

Cypress Semiconductor Corp
2,612 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Standard 16Kb (16K x 1) Parallel - 35ns 35 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
5962-8852506UA Atmel Memory

5962-8852506UA

EEPROM, 32KX8, 150NS, PARALLEL

Atmel
3,209 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 256Kb (32K x 8) Parallel - 10ms 150 ns 4.5V ~ 5.5V -55°C ~ 125°C (TC) Through Hole
R1RP0416DSB-2PR#D0 Renesas Electronics America Inc Memory

R1RP0416DSB-2PR#D0

4 M (256K X 16-BIT) SRAM

Renesas Electronics America Inc
2,207 -

RFQ

Bulk * Active - - - - - - - - - - -
Total 49274 Records«Prev1... 15491550155115521553155415551556...2464Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • FudongIC
    1500+ Daily average RFQ Volume
    FudongIC
    20,000.000 Standard Product Unit
    FudongIC
    1800+ Worldwide Manufacturers
    FudongIC
    15,000+ In-stock Warehouse
    FudongIC

    HOME

    FudongIC

    PRODUCT

    FudongIC

    PHONE

    FudongIC

    USER