Memory

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
DS1401/NO-BRAND Analog Devices Inc./Maxim Integrated Memory

DS1401/NO-BRAND

DS1401

Analog Devices Inc./Maxim Integrated
2,388 -

RFQ

Bulk * Active - - - - - - - - - - -
27C256-20/P229 Microchip Technology Memory

27C256-20/P229

IC EPROM 256KBIT PARALLEL 28DIP

Microchip Technology
2,390 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - OTP 256Kb (32K x 8) Parallel - - 200 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
CY7C1041CV33-12VC Cypress Semiconductor Corp Memory

CY7C1041CV33-12VC

STANDARD SRAM, 256KX16

Cypress Semiconductor Corp
2,786 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 4Mb (256K x 16) Parallel - 12ns 12 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
CY62148BLL-70SCT Cypress Semiconductor Corp Memory

CY62148BLL-70SCT

STANDARD SRAM, 512KX8, 70NS

Cypress Semiconductor Corp
2,762 -

RFQ

FudongIC

Datasheet

Bulk MoBL® Active Volatile SRAM SRAM - Asynchronous 4Mb (512K x 8) Parallel - 70ns 70 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
CAT24C02LI Catalyst Semiconductor Inc. Memory

CAT24C02LI

IC EEPROM 2KBIT I2C 400KHZ 8DIP

Catalyst Semiconductor Inc.
3,452 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 2Kb (256 x 8) I²C 400 kHz 5ms 900 ns 1.7V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
R1WV6416RSD-5SR#B0 Renesas Electronics America Inc Memory

R1WV6416RSD-5SR#B0

STANDARD SRAM, 4MX16, 55NS

Renesas Electronics America Inc
2,972 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
CY62147DV30LL-70ZSXI Cypress Semiconductor Corp Memory

CY62147DV30LL-70ZSXI

STANDARD SRAM, 256KX16, 70NS

Cypress Semiconductor Corp
2,504 -

RFQ

FudongIC

Datasheet

Bulk MoBL® Active Volatile SRAM SRAM - Asynchronous 4Mb (256K x 16) Parallel - 70ns 70 ns 2.2V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
NM24C03LMT8 Fairchild Semiconductor Memory

NM24C03LMT8

IC EEPROM 2KBIT I2C 8TSSOP

Fairchild Semiconductor
3,603 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 2Kb (256 x 8) I²C 100 kHz 15ms 3.5 µs 2.7V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
71V016SA15PH IDT, Integrated Device Technology Inc Memory

71V016SA15PH

IC SRAM 1MBIT PARALLEL 44TSOP II

IDT, Integrated Device Technology Inc
2,504 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Mb (64K x 16) Parallel - 15ns 15 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
SMJ5C1008-25JDCM Texas Instruments Memory

SMJ5C1008-25JDCM

STANDARD SRAM, 128KX8

Texas Instruments
3,711 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
NM24C05UFM8 Fairchild Semiconductor Memory

NM24C05UFM8

IC EEPROM 4KBIT I2C 400KHZ 8SO

Fairchild Semiconductor
3,042 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 4Kb (512 x 8) I²C 400 kHz 10ms 900 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
CY7C197-45PC Cypress Semiconductor Corp Memory

CY7C197-45PC

STANDARD SRAM, 256KX1, 45NS

Cypress Semiconductor Corp
2,079 -

RFQ

Bulk - Active Volatile SRAM SRAM - Asynchronous 256Kb (64K x 4) Parallel - 45ns 45 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
27C128-20/UC Microchip Technology Memory

27C128-20/UC

128K (16K X 8) EPROM

Microchip Technology
3,269 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - OTP 128Kb (16K x 8) Parallel - - 200 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) -
71V124HSA10PH IDT, Integrated Device Technology Inc Memory

71V124HSA10PH

IC SRAM 1MBIT PARALLEL 32TSOP II

IDT, Integrated Device Technology Inc
2,107 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Mb (128K x 8) Parallel - 10ns 10 ns 3.15V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
71V016SA20PHG1 IDT, Integrated Device Technology Inc Memory

71V016SA20PHG1

IC SRAM 1MBIT PARALLEL 44TSOP II

IDT, Integrated Device Technology Inc
2,727 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Mb (64K x 16) Parallel - 20ns 20 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
71V416VS12BEG IDT, Integrated Device Technology Inc Memory

71V416VS12BEG

IC SRAM 4MBIT PARALLEL 48CABGA

IDT, Integrated Device Technology Inc
3,313 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 4Mb (256K x 16) Parallel - 12ns 12 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
CY7C1019CV33-12VI Cypress Semiconductor Corp Memory

CY7C1019CV33-12VI

STANDARD SRAM, 128KX8

Cypress Semiconductor Corp
2,385 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Mb (128K x 8) Parallel - 12ns 12 ns 3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
NM24C08UEN Fairchild Semiconductor Memory

NM24C08UEN

IC EEPROM 8KBIT I2C 100KHZ 8DIP

Fairchild Semiconductor
3,987 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EEPROM EEPROM 8Kb (1K x 8) I²C 100 kHz 10ms 3.5 µs 4.5V ~ 5.5V -40°C ~ 85°C (TA) Through Hole
FM27C512VE150 Fairchild Semiconductor Memory

FM27C512VE150

OTP ROM, 64KX8, 150NS PQCC32

Fairchild Semiconductor
2,779 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - OTP 512Kb (64K x 8) Parallel - - 150 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
MT29E768G08EEHBBJ4-3ES:B TR Micron Technology Inc. Memory

MT29E768G08EEHBBJ4-3ES:B TR

IC FLASH 768GBIT PAR 132VBGA

Micron Technology Inc.
2,300 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND 768Gb (96G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
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