Memory

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
R1LV0816ASB-7SI#S0 Renesas Electronics America Inc Memory

R1LV0816ASB-7SI#S0

IC SRAM 8MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc
3,388 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM 8Mb (512K x 16) Parallel - 70ns 70 ns 2.4V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
R1LV0816ASA-5SI#SK Renesas Electronics America Inc Memory

R1LV0816ASA-5SI#SK

SRAM 8MBIT 55NS

Renesas Electronics America Inc
3,658 -

RFQ

Bulk * Active - - - - - - - - - - -
R1LV0808ASB-7SI#S0 Renesas Electronics America Inc Memory

R1LV0808ASB-7SI#S0

IC SRAM 8MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc
2,124 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM 8Mb (1M x 8) Parallel - 70ns 70 ns 2.4V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
R1LV0816ASD-5SI#B0 Renesas Electronics America Inc Memory

R1LV0816ASD-5SI#B0

IC SRAM 8MBIT PARALLEL 52TSOP II

Renesas Electronics America Inc
918 -

RFQ

Tray - Obsolete Volatile SRAM SRAM 8Mb (1M x 8, 512K x 16) Parallel - 55ns 55 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
R1LV0816ASA-7SI#B0 Renesas Electronics America Inc Memory

R1LV0816ASA-7SI#B0

IC SRAM 8MBIT PARALLEL 48TSOP I

Renesas Electronics America Inc
396 -

RFQ

Bulk - Obsolete Volatile SRAM SRAM 8Mb (1M x 8, 512K x 16) Parallel - 70ns 70 ns 2.4V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
HN27C4096AG12 Renesas Electronics America Inc Memory

HN27C4096AG12

UV EPROM, 256KX16, 120NS

Renesas Electronics America Inc
3,379 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - UV 4Mb (256K x 16) Parallel - - 120 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
HN27C4001G15 Renesas Electronics America Inc Memory

HN27C4001G15

UV EPROM, 512KX8, 150NS

Renesas Electronics America Inc
3,485 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - UV 4Mb (512K x 8) Parallel - - 150 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
HN27C4001G10 Renesas Electronics America Inc Memory

HN27C4001G10

UV EPROM, 512KX8, 100NS

Renesas Electronics America Inc
926 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - UV 4Mb (512K x 8) Parallel - - 100 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
HN27C4096AG10 Renesas Electronics America Inc Memory

HN27C4096AG10

UV EPROM, 256KX16, 100NS

Renesas Electronics America Inc
239 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - UV 4Mb (256K x 16) Parallel - - 100 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
HN27C4001G12 Renesas Electronics America Inc Memory

HN27C4001G12

UV EPROM, 512KX8, 120NS

Renesas Electronics America Inc
168 -

RFQ

FudongIC

Datasheet

Bulk - Active Non-Volatile EPROM EPROM - UV 4Mb (512K x 8) Parallel - - 120 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
R1QEA7236ABB-20IB0 Renesas Electronics America Inc Memory

R1QEA7236ABB-20IB0

STANDARD SRAM, 2MX36, 0.45NS

Renesas Electronics America Inc
341 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
M3008316045NX0IBCY Renesas Electronics America Inc Memory

M3008316045NX0IBCY

8MB MRAM PARALLEL INTERFACE, 45N

Renesas Electronics America Inc
168 -

RFQ

FudongIC

Datasheet

Tray - Active Non-Volatile RAM MRAM (Magnetoresistive RAM) 8Mb (512K x 16) Parallel - 45ns 45 ns 2.7V ~ 3.6V -40°C ~ 85°C Surface Mount
R1QHA3636CBG-25IB0 Renesas Electronics America Inc Memory

R1QHA3636CBG-25IB0

36-MBIT DDR II + SRAM MEMORY

Renesas Electronics America Inc
601 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QEA3636CBG-19IB0 Renesas Electronics America Inc Memory

R1QEA3636CBG-19IB0

36-MBIT DDR II + SRAM MEMORY

Renesas Electronics America Inc
3,435 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QDA3618CBG-19IB0 Renesas Electronics America Inc Memory

R1QDA3618CBG-19IB0

STANDARD SRAM, 2MX18, 0.45NS

Renesas Electronics America Inc
955 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
HM2V8100TTI5SSPE Renesas Electronics America Inc Memory

HM2V8100TTI5SSPE

MEMORY SRAM 8M

Renesas Electronics America Inc
2,699 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QEA7218ABG-22IB0 Renesas Electronics America Inc Memory

R1QEA7218ABG-22IB0

STANDARD SRAM, 4MX18, 0.45NS

Renesas Electronics America Inc
2,168 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
R1QDA3636CBB-19IB0 Renesas Electronics America Inc Memory

R1QDA3636CBB-19IB0

STANDARD SRAM, 1MX36, 0.45NS

Renesas Electronics America Inc
501 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
R1QDA7218ABG-20IB0 Renesas Electronics America Inc Memory

R1QDA7218ABG-20IB0

STANDARD SRAM, 4MX18, 0.45NS

Renesas Electronics America Inc
127 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
UPD48288218AF1-E24-DW1-A Renesas Electronics America Inc Memory

UPD48288218AF1-E24-DW1-A

DDR DRAM, 16MX18

Renesas Electronics America Inc
117 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
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