Memory

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
QS70261A-25TF Quality Semiconductor Memory

QS70261A-25TF

MULTI-PORT SRAM, 16KX16, 25NS

Quality Semiconductor
506 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
HM4-6516-9 Harris Corporation Memory

HM4-6516-9

2K X 8 CMOS RAM

Harris Corporation
334 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 16Kb (2K x 8) Parallel - 280ns 200 ns 4.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
S70GL02GT12FHIV10 Cypress Semiconductor Corp Memory

S70GL02GT12FHIV10

IC FLASH 2GBIT PARALLEL 64FBGA

Cypress Semiconductor Corp
993 -

RFQ

FudongIC

Datasheet

Tray GL-T Active Non-Volatile FLASH FLASH - NOR 2Gb (256M x 8, 128M x 16) Parallel - - 120 ns 1.65V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
TN28F020-90 Rochester Electronics, LLC Memory

TN28F020-90

FLASH, 256KX8, 90NS, PQCC32

Rochester Electronics, LLC
526 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
MT57W2MH8CF-6 Micron Technology Inc. Memory

MT57W2MH8CF-6

IC SRAM 18MBIT PARALLEL 165FBGA

Micron Technology Inc.
3,572 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Synchronous 18Mb (2M x 8) Parallel 167 MHz - - 1.7V ~ 1.9V 0°C ~ 70°C (TA) Surface Mount
MT57W2MH8CF-4 Micron Technology Inc. Memory

MT57W2MH8CF-4

DDR SRAM, 2MX8, 0.45NS PBGA165

Micron Technology Inc.
3,630 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
MT57W2MH8CF-5 Micron Technology Inc. Memory

MT57W2MH8CF-5

DDR SRAM, 2MX8, 0.45NS PBGA165

Micron Technology Inc.
518 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
M3008316045NX0IBCY Renesas Electronics America Inc Memory

M3008316045NX0IBCY

8MB MRAM PARALLEL INTERFACE, 45N

Renesas Electronics America Inc
168 -

RFQ

FudongIC

Datasheet

Tray - Active Non-Volatile RAM MRAM (Magnetoresistive RAM) 8Mb (512K x 16) Parallel - 45ns 45 ns 2.7V ~ 3.6V -40°C ~ 85°C Surface Mount
CY15B104QSN-108SXI Cypress Semiconductor Corp Memory

CY15B104QSN-108SXI

IC FRAM 4MBIT 108MHZ 8SOIC

Cypress Semiconductor Corp
429 -

RFQ

FudongIC

Datasheet

Tube Excelon™-Ultra, F-RAM™ Active Non-Volatile FRAM FRAM (Ferroelectric RAM) 4Mb (512K x 8) SPI - Quad I/O 108 MHz - - 1.8V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
CY7C1321SV18-167BZC Cypress Semiconductor Corp Memory

CY7C1321SV18-167BZC

SYNC RAM

Cypress Semiconductor Corp
292 -

RFQ

Bulk - Active Volatile SRAM SRAM - Synchronous, DDR II 18Mb (512K x 36) Parallel 167 MHz - - 1.7V ~ 1.9V 0°C ~ 70°C (TA) Surface Mount
CY7C145-15JCT Cypress Semiconductor Corp Memory

CY7C145-15JCT

DUAL-PORT SRAM, 8KX9, 15NS

Cypress Semiconductor Corp
700 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Dual Port, Asynchronous 72Kb (8K x 9) Parallel - 15ns 15 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
R1QHA3636CBG-25IB0 Renesas Electronics America Inc Memory

R1QHA3636CBG-25IB0

36-MBIT DDR II + SRAM MEMORY

Renesas Electronics America Inc
601 -

RFQ

Bulk * Active - - - - - - - - - - -
SMJ61CD16SA-35JDM Texas Instruments Memory

SMJ61CD16SA-35JDM

STANDARD SRAM, 16KX1

Texas Instruments
281 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QEA3636CBG-19IB0 Renesas Electronics America Inc Memory

R1QEA3636CBG-19IB0

36-MBIT DDR II + SRAM MEMORY

Renesas Electronics America Inc
3,435 -

RFQ

Bulk * Active - - - - - - - - - - -
SMJ64C16S-35JDM Texas Instruments Memory

SMJ64C16S-35JDM

DUAL MARKED (5962-8670503RA)

Texas Instruments
2,283 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QDA3618CBG-19IB0 Renesas Electronics America Inc Memory

R1QDA3618CBG-19IB0

STANDARD SRAM, 2MX18, 0.45NS

Renesas Electronics America Inc
955 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
CDP1821CD3R1783 Harris Corporation Memory

CDP1821CD3R1783

HIGH-RELIABILITY CMOS 1024-WORD

Harris Corporation
3,110 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Kb (1K x 1) Parallel - 420ns 255 ns 4V ~ 6.5V -55°C ~ 125°C (TA) Through Hole
HM2V8100TTI5SSPE Renesas Electronics America Inc Memory

HM2V8100TTI5SSPE

MEMORY SRAM 8M

Renesas Electronics America Inc
2,699 -

RFQ

Bulk * Active - - - - - - - - - - -
R1QEA7218ABG-22IB0 Renesas Electronics America Inc Memory

R1QEA7218ABG-22IB0

STANDARD SRAM, 4MX18, 0.45NS

Renesas Electronics America Inc
2,168 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - -
CY7C1380B-167AI Cypress Semiconductor Corp Memory

CY7C1380B-167AI

CACHE SRAM, 512KX36, 3.4NS

Cypress Semiconductor Corp
937 -

RFQ

FudongIC

Datasheet

Bulk - Active Volatile SRAM SRAM - Synchronous, SDR 18Mb (512K x 36) Parallel 167 MHz - 3.4 ns 3.135V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
Total 49274 Records«Prev1... 769770771772773774775776...2464Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • FudongIC
    1500+ Daily average RFQ Volume
    FudongIC
    20,000.000 Standard Product Unit
    FudongIC
    1800+ Worldwide Manufacturers
    FudongIC
    15,000+ In-stock Warehouse
    FudongIC

    HOME

    FudongIC

    PRODUCT

    FudongIC

    PHONE

    FudongIC

    USER