Transistors - Bipolar (BJT) - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC2235-Y(T6CANOFM Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6CANOFM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,315 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6CN,A,F Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6CN,A,F

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,479 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
KSD882YSTSTU onsemi Transistors - Bipolar (BJT) - Single

KSD882YSTSTU

TRANS NPN 30V 3A TO126-3

onsemi
2,782 -

RFQ

FudongIC

Datasheet

Tube - Obsolete NPN 3 A 30 V 500mV @ 200mA, 2A 1µA (ICBO) 160 @ 1A, 2V 1 W 90MHz -55°C ~ 150°C (TJ) Through Hole
KSD882OS onsemi Transistors - Bipolar (BJT) - Single

KSD882OS

TRANS NPN 30V 3A TO126-3

onsemi
3,975 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 3 A 30 V 500mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 2V 1 W 90MHz -55°C ~ 150°C (TJ) Through Hole
KSA1381ESTSTU onsemi Transistors - Bipolar (BJT) - Single

KSA1381ESTSTU

TRANS PNP 300V 0.1A TO126-3

onsemi
3,532 -

RFQ

FudongIC

Datasheet

Tube - Obsolete PNP 100 mA 300 V 600mV @ 2mA, 20mA 100nA (ICBO) 100 @ 10mA, 10V 7 W 150MHz -55°C ~ 150°C (TJ) Through Hole
2SC2235-Y(T6FJT,AF Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6FJT,AF

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,452 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6FJT,FM Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6FJT,FM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,821 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
KSD882YSTSSTU onsemi Transistors - Bipolar (BJT) - Single

KSD882YSTSSTU

TRANS NPN 30V 3A TO126-3

onsemi
3,735 -

RFQ

FudongIC

Datasheet

Tube - Obsolete NPN 3 A 30 V 500mV @ 200mA, 2A 1µA (ICBO) 160 @ 1A, 2V 1 W 90MHz -55°C ~ 150°C (TJ) Through Hole
2SC2235-Y(T6KMATFM Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6KMATFM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,749 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
TN6717A onsemi Transistors - Bipolar (BJT) - Single

TN6717A

TRANS NPN 80V 1.2A TO226-3

onsemi
2,078 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 1.2 A 80 V 350mV @ 10mA, 250mA 100nA (ICBO) 50 @ 250mA, 1V 1 W - -55°C ~ 150°C (TJ) Through Hole
2SC2235-Y(T6ND,AF Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6ND,AF

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,284 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6OMI,FM Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y(T6OMI,FM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,173 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
TN6714A onsemi Transistors - Bipolar (BJT) - Single

TN6714A

TRANS NPN 30V 2A TO226-3

onsemi
3,187 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 2 A 30 V 500mV @ 100mA, 1A 100nA (ICBO) 50 @ 1A, 1V 1 W - -55°C ~ 150°C (TJ) Through Hole
2SC2235-Y,F(J Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y,F(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,014 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6ASHF(J Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y,T6ASHF(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,548 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
FJN13003BU onsemi Transistors - Bipolar (BJT) - Single

FJN13003BU

TRANS NPN 400V 1.5A TO92-3

onsemi
3,699 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 1.5 A 400 V 3V @ 500mA, 1.5A - 9 @ 500mA, 2V 1.1 W 4MHz 150°C (TJ) Through Hole
FPN430A onsemi Transistors - Bipolar (BJT) - Single

FPN430A

TRANS PNP 30V 2A TO226

onsemi
2,935 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete PNP 2 A 30 V 450mV @ 100mA, 1A 100nA (ICBO) 250 @ 100mA, 2V 1 W 100MHz -55°C ~ 150°C (TJ) Through Hole
2SC2235-Y,T6F(J Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y,T6F(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,701 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6KEHF(M Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y,T6KEHF(M

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,858 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6USNF(M Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

2SC2235-Y,T6USNF(M

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,190 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
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