Transistors - FETs, MOSFETs - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR3636TRL Infineon Technologies Transistors - FETs, MOSFETs - Single

AUIRLR3636TRL

MOSFET N-CH 60V 99A DPAK

Infineon Technologies
2,482 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V - 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1947-E Renesas Electronics America Inc Transistors - FETs, MOSFETs - Single

2SK1947-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
454 -

RFQ

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Datasheet

Bulk * Active - - - - - - - - - - - - - -
STP26N60M2 STMicroelectronics Transistors - FETs, MOSFETs - Single

STP26N60M2

MOSFET N-CHANNEL 600V 20A TO220

STMicroelectronics
3,936 -

RFQ

FudongIC

Datasheet

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V - - - - - - 169W (Tc) - Through Hole
IXTH1N450HV IXYS Transistors - FETs, MOSFETs - Single

IXTH1N450HV

MOSFET N-CH 4500V 1A TO247HV

IXYS
465 -

RFQ

FudongIC

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 1A (Tc) 10V 80Ohm @ 50mA, 10V 6V @ 250µA 46 nC @ 10 V ±20V 1700 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1526-E Renesas Electronics America Inc Transistors - FETs, MOSFETs - Single

2SK1526-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,028 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - - - - -
TW015N65C,S1F Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage
165 -

RFQ

FudongIC

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C Through Hole
2SK1519-E Renesas Electronics America Inc Transistors - FETs, MOSFETs - Single

2SK1519-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
432 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - - - - -
TW015N120C,S1F Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single

TW015N120C,S1F

G3 1200V SIC-MOSFET TO-247 15MO

Toshiba Semiconductor and Storage
160 -

RFQ

FudongIC

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C Through Hole
NTE2386 NTE Electronics, Inc Transistors - FETs, MOSFETs - Single

NTE2386

MOSFET N-CHANNEL 600V 6.2A TO3

NTE Electronics, Inc
180 -

RFQ

FudongIC

Datasheet

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.4A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R20MT17N GeneSiC Semiconductor Transistors - FETs, MOSFETs - Single

G3R20MT17N

SIC MOSFET N-CH 100A SOT227

GeneSiC Semiconductor
160 -

RFQ

FudongIC

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 100A (Tc) 15V 26mOhm @ 75A, 15V 2.7V @ 15mA 400 nC @ 15 V ±15V 10187 pF @ 1000 V - 523W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
HUFA75329G3 Fairchild Semiconductor Transistors - FETs, MOSFETs - Single

HUFA75329G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,700 -

RFQ

FudongIC

Datasheet

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
NEM090603M-28-A Renesas Electronics America Inc Transistors - FETs, MOSFETs - Single

NEM090603M-28-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
251 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - - - - -
DMN2450UFB4-7B Diodes Incorporated Transistors - FETs, MOSFETs - Single

DMN2450UFB4-7B

MOSFET N-CH 20V 1A X2-DFN1006-3

Diodes Incorporated
10,000 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 400mOhm @ 600mA, 4.5V 900mV @ 250µA 1.3 nC @ 10 V ±12V 56 pF @ 16 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP210DUFB4-7 Diodes Incorporated Transistors - FETs, MOSFETs - Single

DMP210DUFB4-7

MOSFET P-CH 20V 200MA 3DFN

Diodes Incorporated
77,195 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.2V, 4.5V 5Ohm @ 100mA, 4.5V 1V @ 250µA - ±10V 175 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN61D9UW-7 Diodes Incorporated Transistors - FETs, MOSFETs - Single

DMN61D9UW-7

MOSFET N-CH 60V 340MA SOT323

Diodes Incorporated
3,300 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V 1V @ 250µA 0.4 nC @ 4.5 V ±20V 28.5 pF @ 30 V - 320mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FK3503010L Panasonic Electronic Components Transistors - FETs, MOSFETs - Single

FK3503010L

MOSFET N-CH 30V 100MA SMINI3

Panasonic Electronic Components
4,524 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3Ohm @ 10mA, 4V 1.5V @ 1µA - ±12V 12 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
FCP9N60N-F102 onsemi Transistors - FETs, MOSFETs - Single

FCP9N60N-F102

MOSFET N-CHANNEL 600V 9A TO220F

onsemi
2,236 -

RFQ

Tube,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 1240 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N06S207ATMA4 Infineon Technologies Transistors - FETs, MOSFETs - Single

IPB80N06S207ATMA4

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
1,000 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.3mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD5C632NLT4G onsemi Transistors - FETs, MOSFETs - Single

NVD5C632NLT4G

MOSFET N-CH 60V 29A/155A DPAK

onsemi
3,371 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 155A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.1V @ 250µA 78 nC @ 10 V ±20V 5700 pF @ 25 V - 4W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9628-100A,118 Nexperia USA Inc. Transistors - FETs, MOSFETs - Single

BUK9628-100A,118

MOSFET N-CH 100V 49A D2PAK

Nexperia USA Inc.
3,116 -

RFQ

FudongIC

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 49A (Tc) 5V, 10V 27mOhm @ 25A, 10V 2V @ 1mA - ±10V 4293 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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