Transistors - FETs, MOSFETs - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI041N12N3G Infineon Technologies Transistors - FETs, MOSFETs - Single

IPI041N12N3G

IPI041N12 - 12V-300V N-CHANNEL P

Infineon Technologies
2,402 -

RFQ

FudongIC

Datasheet

Bulk * Active - - - - - - - - - - - - - -
AUIRFS3107-7TRL International Rectifier Transistors - FETs, MOSFETs - Single

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK

International Rectifier
2,046 -

RFQ

FudongIC

Datasheet

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125C6 Infineon Technologies Transistors - FETs, MOSFETs - Single

IPP60R125C6

POWER FIELD-EFFECT TRANSISTOR, 3

Infineon Technologies
3,024 -

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FudongIC

Datasheet

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BSS84AKW Nexperia USA Inc. Transistors - FETs, MOSFETs - Single

BSS84AKW

NOW NEXPERIA BSS84AKW - SMALL SI

Nexperia USA Inc.
2,983 -

RFQ

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PMZB350UPE,315 NXP USA Inc. Transistors - FETs, MOSFETs - Single

PMZB350UPE,315

NOW NEXPERIA PMZB350UPE - SMALL

NXP USA Inc.
3,845 -

RFQ

FudongIC

Datasheet

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 450mOhm @ 300mA, 4.5V 950mV @ 250µA 1.9 nC @ 4.5 V ±8V 127 pF @ 10 V - 360mW (Ta), 3.125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDM3622 Fairchild Semiconductor Transistors - FETs, MOSFETs - Single

FDM3622

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,273 -

RFQ

FudongIC

Datasheet

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta) 6V, 10V 60mOhm @ 4.4A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1090 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7799L2TR International Rectifier Transistors - FETs, MOSFETs - Single

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFT

International Rectifier
3,830 -

RFQ

FudongIC

Datasheet

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI075N15N3G Infineon Technologies Transistors - FETs, MOSFETs - Single

IPI075N15N3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,332 -

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FudongIC

Datasheet

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AUIRFS3004-7TRL International Rectifier Transistors - FETs, MOSFETs - Single

AUIRFS3004-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier
2,168 -

RFQ

FudongIC

Datasheet

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC8296 Fairchild Semiconductor Transistors - FETs, MOSFETs - Single

FDMC8296

MOSFET N-CH 30V 12A/18A 8MLP

Fairchild Semiconductor
3,845 -

RFQ

FudongIC

Datasheet

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 18A (Tc) 4.5V, 10V 8mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 2.3W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD20N06TM Fairchild Semiconductor Transistors - FETs, MOSFETs - Single

FQD20N06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,722 -

RFQ

FudongIC

Datasheet

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP62N15P IXYS Transistors - FETs, MOSFETs - Single

IXTP62N15P

MOSFET N-CH 150V 62A TO220AB

IXYS
3,440 -

RFQ

FudongIC

Datasheet

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK16J60W5,S1VQ Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,758 -

RFQ

FudongIC

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
FCP13N60N onsemi Transistors - FETs, MOSFETs - Single

FCP13N60N

MOSFET N-CH 600V 13A TO220-3

onsemi
3,828 -

RFQ

FudongIC

Datasheet

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 258mOhm @ 6.5A, 10V 4V @ 250µA 39.5 nC @ 10 V ±30V 1765 pF @ 100 V - 116W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK20J60W,S1VE Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single

TK20J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,289 -

RFQ

FudongIC

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C Through Hole
FQAF11N90C onsemi Transistors - FETs, MOSFETs - Single

FQAF11N90C

MOSFET N-CH 900V 7A TO3PF

onsemi
2,533 -

RFQ

FudongIC

Datasheet

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 3290 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30F50B Microchip Technology Transistors - FETs, MOSFETs - Single

APT30F50B

MOSFET N-CH 500V 30A TO247

Microchip Technology
2,177 -

RFQ

FudongIC

Datasheet

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R125CFD7XKSA1 Infineon Technologies Transistors - FETs, MOSFETs - Single

IPA60R125CFD7XKSA1

MOSFET N-CH 600V 11A TO220

Infineon Technologies
2,513 -

RFQ

FudongIC

Datasheet

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH10N80P IXYS Transistors - FETs, MOSFETs - Single

IXFH10N80P

MOSFET N-CH 800V 10A TO247AD

IXYS
2,104 -

RFQ

FudongIC

Datasheet

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP40N65M2 STMicroelectronics Transistors - FETs, MOSFETs - Single

STP40N65M2

MOSFET N-CH 650V 32A TO220

STMicroelectronics
2,458 -

RFQ

FudongIC

Datasheet

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 99mOhm @ 16A, 10V 4V @ 250µA 56.5 nC @ 10 V ±25V 2355 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
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