Transistors - FETs, MOSFETs - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1K49211 Harris Corporation Transistors - FETs, MOSFETs - Single

RF1K49211

N-CHANNEL POWER MOSFET

Harris Corporation
1,588 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 12 V 7A - - - - - - - - - Surface Mount
IRFU322 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFU322

N-CHANNEL POWER MOSFET

Harris Corporation
898 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Ta) 10V 2.5Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD20N03SM Harris Corporation Transistors - FETs, MOSFETs - Single

RFD20N03SM

N-CHANNEL POWER MOSFET

Harris Corporation
8,441 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF621R Harris Corporation Transistors - FETs, MOSFETs - Single

IRF621R

N-CHANNEL POWER MOSFET

Harris Corporation
6,837 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD15N06LESM Harris Corporation Transistors - FETs, MOSFETs - Single

RFD15N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
4,077 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
IRFU221 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFU221

N-CHANNEL POWER MOSFET

Harris Corporation
2,419 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR222 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFR222

N-CHANNEL POWER MOSFET

Harris Corporation
944 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU222 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFU222

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU421 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFU421

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75332S3S Harris Corporation Transistors - FETs, MOSFETs - Single

HUF75332S3S

N-CHANNEL POWER MOSFET

Harris Corporation
2,788 -

RFQ

FudongIC

Datasheet

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 10V 19mOhm @ 52A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF823 Harris Corporation Transistors - FETs, MOSFETs - Single

IRF823

N-CHANNEL POWER MOSFET

Harris Corporation
2,284 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP23N06LE Harris Corporation Transistors - FETs, MOSFETs - Single

RFP23N06LE

N-CHANNEL, MOSFET

Harris Corporation
1,486 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF9622 Harris Corporation Transistors - FETs, MOSFETs - Single

IRF9622

P-CHANNEL POWER MOSFET

Harris Corporation
1,128 -

RFQ

FudongIC

Datasheet

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR221 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFR221

N-CHANNEL POWER MOSFET

Harris Corporation
1,075 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR421 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU422 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFU422

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RLP03N06CLE Harris Corporation Transistors - FETs, MOSFETs - Single

RLP03N06CLE

N-CHANNEL POWER MOSFET

Harris Corporation
3,673 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF512 Harris Corporation Transistors - FETs, MOSFETs - Single

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation
1,663 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP2N12 Harris Corporation Transistors - FETs, MOSFETs - Single

RFP2N12

N-CHANNEL, MOSFET

Harris Corporation
1,550 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR422 Harris Corporation Transistors - FETs, MOSFETs - Single

IRFR422

N-CHANNEL POWER MOSFET

Harris Corporation
1,139 -

RFQ

FudongIC

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 395 Records«Prev12345...20Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • FudongIC
    1500+ Daily average RFQ Volume
    FudongIC
    20,000.000 Standard Product Unit
    FudongIC
    1800+ Worldwide Manufacturers
    FudongIC
    15,000+ In-stock Warehouse
    FudongIC

    HOME

    FudongIC

    PRODUCT

    FudongIC

    PHONE

    FudongIC

    USER