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Transistors - FETs, MOSFETs - Single
| Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM60NB099PW C1GMOSFET N-CHANNEL 600V 38A TO247 Taiwan Semiconductor Corporation |
2,057 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 99mOhm @ 11.7A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 2587 pF @ 100 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM80N400CF C0GMOSFET N-CH 800V 12A ITO220S Taiwan Semiconductor Corporation |
3,861 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 400mOhm @ 2.7A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1848 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM340N06CH X0GMOSFET N-CHANNEL 60V 30A TO251 Taiwan Semiconductor Corporation |
965 | - |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 1180 pF @ 30 V | - | 66W (Tc) | 150°C (TJ) | Through Hole |
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