Transistors - IGBTs - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT40GP60SG Microsemi Corporation Transistors - IGBTs - Single

APT40GP60SG

IGBT 600V 100A 543W D3PAK

Microsemi Corporation
3,081 -

RFQ

FudongIC

Datasheet

Tube POWER MOS 7® Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 352µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT75GN60B2DQ3G Microsemi Corporation Transistors - IGBTs - Single

APT75GN60B2DQ3G

IGBT 600V 155A 536W TO264

Microsemi Corporation
2,166 -

RFQ

Tube - Obsolete - 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2500µJ (on), 2140µJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V - - Through Hole
APT25GP120BDQ1G Microchip Technology Transistors - IGBTs - Single

APT25GP120BDQ1G

IGBT 1200V 69A 417W TO247

Microchip Technology
3,589 -

RFQ

FudongIC

Datasheet

Tube POWER MOS 7® Active PT 1200 V 69 A 90 A 3.9V @ 15V, 25A 417 W 500µJ (on), 440µJ (off) Standard 110 nC 12ns/70ns 600V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGPF30N30 onsemi Transistors - IGBTs - Single

FGPF30N30

IGBT 300V 46W TO220F

onsemi
3,446 -

RFQ

FudongIC

Datasheet

Tube - Obsolete - 300 V - 80 A 1.5V @ 15V, 10A 46 W - Standard 39 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGPF90N30 onsemi Transistors - IGBTs - Single

FGPF90N30

IGBT 300V 56.8W TO220F

onsemi
2,461 -

RFQ

FudongIC

Datasheet

Tube - Obsolete - 300 V - 220 A 1.55V @ 15V, 30A 56.8 W - Standard 93 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGPF7N60LSDTU onsemi Transistors - IGBTs - Single

FGPF7N60LSDTU

IGBT 600V 14A 45W TO220F

onsemi
3,970 -

RFQ

FudongIC

Datasheet

Tube - Obsolete - 600 V 14 A 21 A 2V @ 15V, 7A 45 W 270µJ (on), 3.8mJ (off) Standard 24 nC 120ns/410ns 300V, 7A, 470Ohm, 15V 65 ns -55°C ~ 150°C (TJ) Through Hole
FGPF120N30TU onsemi Transistors - IGBTs - Single

FGPF120N30TU

IGBT 300V 120A 60W TO220F

onsemi
2,468 -

RFQ

FudongIC

Datasheet

Tube - Obsolete - 300 V 120 A 180 A 1.4V @ 15V, 25A 60 W - Standard 112 nC - - - -55°C ~ 150°C (TJ) Through Hole
STGP19NC60WD STMicroelectronics Transistors - IGBTs - Single

STGP19NC60WD

IGBT 600V 40A 125W TO220

STMicroelectronics
2,428 -

RFQ

FudongIC

Datasheet

Tube PowerMESH™ Obsolete - 600 V 40 A - 2.5V @ 15V, 12A 125 W 81µJ (on), 125µJ (off) Standard 53 nC 25ns/90ns 390V, 12A, 10Ohm, 15V 31 ns -55°C ~ 150°C (TJ) Through Hole
IXGH15N120CD1 IXYS Transistors - IGBTs - Single

IXGH15N120CD1

IGBT 1200V 30A 150W TO247

IXYS
2,737 -

RFQ

FudongIC

Datasheet

Bulk - Active - 1200 V 30 A 60 A 3.8V @ 15V, 15A 150 W 1.05mJ (off) Standard 69 nC 25ns/150ns 960V, 15A, 10Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Through Hole
IXRH40N120 IXYS Transistors - IGBTs - Single

IXRH40N120

IGBT 1200V 55A 300W TO247AD

IXYS
2,400 -

RFQ

FudongIC

Datasheet

Bulk - Obsolete NPT 1200 V 55 A - 2.7V @ 15V, 30A 300 W 3mJ (on), 700µJ (off) Standard 90 nC - 600V, 35A, 15Ohm, 15V 2.1 µs -55°C ~ 150°C (TJ) Through Hole
FGL40N120ANTU onsemi Transistors - IGBTs - Single

FGL40N120ANTU

IGBT NPT 1200V 64A TO264-3

onsemi
3,790 -

RFQ

FudongIC

Datasheet

Tube - Obsolete NPT 1200 V 64 A 160 A 3.2V @ 15V, 40A 500 W 2.3mJ (on), 1.1mJ (off) Standard 220 nC 15ns/110ns 600V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGPF30N30DTU onsemi Transistors - IGBTs - Single

FGPF30N30DTU

IGBT 300V 46W TO220F

onsemi
3,751 -

RFQ

FudongIC

Datasheet

Tube - Obsolete - 300 V - 80 A 1.5V @ 15V, 10A 46 W - Standard 39 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
FID35-06C IXYS Transistors - IGBTs - Single

FID35-06C

IGBT 600V 38A 125W I4PAC5

IXYS
3,382 -

RFQ

FudongIC

Datasheet

Tube - Active NPT 600 V 38 A - 2.4V @ 15V, 25A 125 W 1.1mJ (on), 600µJ (off) Standard 140 nC - 300V, 25A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
FID36-06D IXYS Transistors - IGBTs - Single

FID36-06D

IGBT 600V 38A 125W I4PAC5

IXYS
3,659 -

RFQ

FudongIC

Datasheet

Tube - Active NPT 600 V 38 A - 2.4V @ 15V, 25A 125 W 1.1mJ (on), 600µJ (off) Standard 140 nC - 300V, 25A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
FID60-06D IXYS Transistors - IGBTs - Single

FID60-06D

IGBT 600V 65A 200W I4PAC5

IXYS
2,148 -

RFQ

FudongIC

Datasheet

Tube - Obsolete NPT 600 V 65 A - 2V @ 15V, 30A 200 W 1mJ (on), 1.4mJ (off) Standard 120 nC - 300V, 30A, 22Ohm, 15V 70 ns -55°C ~ 150°C (TJ) Through Hole
FIO50-12BD IXYS Transistors - IGBTs - Single

FIO50-12BD

IGBT 1200V 50A 200W I4PAC5

IXYS
3,765 -

RFQ

FudongIC

Datasheet

Tube - Obsolete NPT 1200 V 50 A - 2.6V @ 15V, 30A 200 W 4.6mJ (on), 2.2mJ (off) Standard 150 nC - 600V, 30A, 39Ohm, 15V 150 ns -55°C ~ 150°C (TJ) Through Hole
IXBH14N250 IXYS Transistors - IGBTs - Single

IXBH14N250

IGBT 2500V TO247AD

IXYS
2,380 -

RFQ

Tube - Active - 2500 V - - - - - Standard - - - - - Through Hole
IXBH14N250A IXYS Transistors - IGBTs - Single

IXBH14N250A

IGBT 2500V TO247AD

IXYS
2,606 -

RFQ

Tube - Active - 2500 V - - - - - Standard - - - - - Through Hole
IXBH5N160G IXYS Transistors - IGBTs - Single

IXBH5N160G

IGBT 1600V 5.7A 68W TO247AD

IXYS
3,891 -

RFQ

FudongIC

Datasheet

Tube BIMOSFET™ Active - 1600 V 5.7 A - 7.2V @ 15V, 3A 68 W - Standard 26 nC - 960V, 3A, 47Ohm, 10V - -55°C ~ 150°C (TJ) Through Hole
IXBH9N160G IXYS Transistors - IGBTs - Single

IXBH9N160G

IGBT 1600V 9A 100W TO247AD

IXYS
3,636 -

RFQ

FudongIC

Datasheet

Tube BIMOSFET™ Active - 1600 V 9 A 10 A 7V @ 15V, 5A 100 W - Standard 34 nC - 960V, 5A, 27Ohm, 10V - -55°C ~ 150°C (TJ) Through Hole
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