Transistors - IGBTs - Single

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT15GP60BDLG Microsemi Corporation Transistors - IGBTs - Single

APT15GP60BDLG

IGBT 600V 56A 250W TO247

Microsemi Corporation
2,928 -

RFQ

FudongIC

Datasheet

Tube - Active PT 600 V 56 A 65 A 2.7V @ 15V, 15A 250 W 130µJ (on), 121µJ (off) Standard 55 nC 8ns/29ns 400V, 15A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT30GP60B2DLG Microsemi Corporation Transistors - IGBTs - Single

APT30GP60B2DLG

IGBT 600V 100A 463W TMAX

Microsemi Corporation
2,710 -

RFQ

FudongIC

Datasheet

Tube - Active PT 600 V 100 A 120 A 2.7V @ 15V, 30A 463 W 260µJ (on), 250µJ (off) Standard 90 nC 13ns/55ns 400V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT30GS60BRDLG Microsemi Corporation Transistors - IGBTs - Single

APT30GS60BRDLG

IGBT 600V 54A 250W TO247

Microsemi Corporation
2,766 -

RFQ

FudongIC

Datasheet

Tube - Active NPT 600 V 54 A 113 A 3.15V @ 15V, 30A 250 W 570µJ (off) Standard 145 nC 16ns/360ns 400V, 30A, 9.1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GS60BRDLG Microsemi Corporation Transistors - IGBTs - Single

APT50GS60BRDLG

IGBT 600V 93A 415W TO247

Microsemi Corporation
3,699 -

RFQ

FudongIC

Datasheet

Tube - Active NPT 600 V 93 A 195 A 3.15V @ 15V, 50A 415 W 755µJ (off) Standard 235 nC 16ns/225ns 400V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GP60LDLG Microsemi Corporation Transistors - IGBTs - Single

APT50GP60LDLG

IGBT 600V 150A 625W TO264

Microsemi Corporation
2,199 -

RFQ

FudongIC

Datasheet

Tube - Obsolete PT 600 V 150 A 190 A 2.7V @ 15V, 50A 625 W 456µJ (on), 635µJ (off) Standard 165 nC 19ns/85ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT45GR65B2DU30 Microsemi Corporation Transistors - IGBTs - Single

APT45GR65B2DU30

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
3,863 -

RFQ

FudongIC

Datasheet

Bulk - Active NPT 650 V 118 A 224 A 2.4V @ 15V, 45A 543 W - Standard 203 nC 15ns/100ns 433V, 45A, 4.3Ohm, 15V 80 ns -55°C ~ 150°C (TJ) Through Hole
APT45GR65BSCD10 Microsemi Corporation Transistors - IGBTs - Single

APT45GR65BSCD10

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
2,687 -

RFQ

Bulk - Obsolete NPT 650 V 118 A 224 A 2.4V @ 15V, 45A 543 W - Standard 203 nC 15ns/100ns 433V, 45A, 4.3Ohm, 15V 80 ns -55°C ~ 150°C (TJ) Through Hole
APT45GR65SSCD10 Microsemi Corporation Transistors - IGBTs - Single

APT45GR65SSCD10

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
3,848 -

RFQ

Bulk - Obsolete NPT 650 V 118 A 224 A 2.4V @ 15V, 45A 543 W - Standard 203 nC 15ns/100ns 433V, 45A, 4.3Ohm, 15V 80 ns -55°C ~ 150°C (TJ) Surface Mount
APT70GR65B2DU40 Microsemi Corporation Transistors - IGBTs - Single

APT70GR65B2DU40

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
3,176 -

RFQ

FudongIC

Datasheet

Bulk - Active NPT 650 V 134 A 280 A 2.4V @ 15V, 70A 595 W - Standard 305 nC 18ns/170ns 433V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT70GR65B2SCD30 Microsemi Corporation Transistors - IGBTs - Single

APT70GR65B2SCD30

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
2,336 -

RFQ

Bulk - Obsolete NPT 650 V 134 A 260 A 2.4V @ 15V, 70A 595 W - - 305 nC 19ns/170ns 433V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT95GR65JDU60 Microsemi Corporation Transistors - IGBTs - Single

APT95GR65JDU60

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation
2,154 -

RFQ

Bulk - Obsolete NPT 650 V 135 A 380 A 2.4V @ 15V, 95A 446 W - Standard 420 nC 29ns/226ns 433V, 95A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Chassis Mount
1214-55P Microsemi Corporation Transistors - IGBTs - Single

1214-55P

TRANSISTOR

Microsemi Corporation
2,834 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
75097 Microsemi Corporation Transistors - IGBTs - Single

75097

TRANSISTOR

Microsemi Corporation
2,162 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
75099 Microsemi Corporation Transistors - IGBTs - Single

75099

TRANSISTOR

Microsemi Corporation
2,308 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
76018 Microsemi Corporation Transistors - IGBTs - Single

76018

TRANSISTOR

Microsemi Corporation
3,053 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
78124 Microsemi Corporation Transistors - IGBTs - Single

78124

TRANSISTOR

Microsemi Corporation
2,342 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
80180 Microsemi Corporation Transistors - IGBTs - Single

80180

TRANSISTOR

Microsemi Corporation
2,551 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
80270 Microsemi Corporation Transistors - IGBTs - Single

80270

TRANSISTOR

Microsemi Corporation
3,728 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
APT50GT120B2RDLG Microsemi Corporation Transistors - IGBTs - Single

APT50GT120B2RDLG

IGBT 1200V 106A 694W TO-247

Microsemi Corporation
2,294 -

RFQ

FudongIC

Datasheet

Tube Thunderbolt IGBT® Active NPT 1200 V 106 A 150 A 3.7V @ 15V, 50A 694 W 3585µJ (on), 1910µJ (off) Standard 240 nC 23ns/215ns 800V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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