All Categories

View More Product Categories >>

GT30N135SRA,S1E Toshiba Semiconductor and Storage

Part No.:: GT30N135SRA,S1E

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Transistors - IGBTs - Single

Package:: TO-247-3

Datasheet:: GT30N135SRA,S1E.pdf

Description:: D-IGBT TO-247 VCES=1350V IC=30A

Quantity:: RFQ Add to RFQ List Buy Now Add to Cart

Unit Price:Request Quote

Total:Submit an RFQ for pricing

Payment:

Shipping:

Application Scenarios

What Applications Is GT30N135SRA,S1E Suitable For?

GT30N135SRA,S1E is a Transistors - IGBTs - Single product from Toshiba Semiconductor and Storage, suitable for component selection in communications, automotive electronics, industrial control, cloud computing and smart-device projects.

5G Communications & Small-Cell Equipment

Suitable for 5G communications equipment, small-cell base stations and information platforms that require reliable Transistors - IGBTs - Single components. Engineers can review the GT30N135SRA,S1E datasheet, package TO-247-3 and stock availability to support component selection.

Automotive & ADAS Electronic Systems

Suitable for automotive, ADAS and vehicle-control systems where original Toshiba Semiconductor and Storage components are required, helping engineers evaluate GT30N135SRA,S1E specifications, pricing and supply lead time.

Industrial IoT & Automation Control

Suitable for industrial IoT, automation equipment, motor control and embedded-vision systems. Engineers can use the GT30N135SRA,S1E description, package TO-247-3 and technical specifications for BOM matching.

Cloud Computing & Data Center Platforms

Can be considered for cloud computing, data centers, server platforms and other high-reliability electronic systems. FudongIC supports GT30N135SRA,S1E datasheet lookup, stock confirmation, pricing requests and one-stop electronic component sourcing.

FudongIC has semiconductor distribution experience and works with global electronic component distributors and spot-stock suppliers in China, supporting component sourcing for 5G communications, aerospace and defense, automotive electronics, industrial control, medical electronics, energy and data-center applications.

Contact FudongIC for GT30N135SRA,S1E Pricing & Technical Support

Product Overview

GT30N135SRA,S1E is a Transistors - IGBTs - Single product from Toshiba Semiconductor and Storage. It is supplied in package TO-247-3 and can be considered for electronic systems where stability, reliability and supply continuity are important. FudongIC can provide GT30N135SRA,S1E datasheet lookup, stock confirmation, pricing requests, BOM sourcing and component-selection support.

Product Description: D-IGBT TO-247 VCES=1350V IC=30A

Key Features

Part Number:GT30N135SRA,S1E
Manufacturer:Toshiba Semiconductor and Storage
Category:Transistors - IGBTs - Single
Package:TO-247-3
Supports datasheet lookup, stock confirmation and pricing requests
Suitable for samples, small production runs and volume sourcing requirements

Applications

GT30N135SRA,S1E may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.

Procurement & Technical Support

If you are looking for GT30N135SRA,S1E stock, volume pricing, lead time, alternative parts or technical documents, you can submit an RFQ through FudongIC. Our sales and technical teams can review your application, specification requirements, package needs and purchase quantity to provide a suitable sourcing option.

Packaging:

Tube
Series:

-
ProductStatus:

Active
IGBTType:

-
Voltage-CollectorEmitterBreakdown(Max):

1350 V
Current-Collector(Ic)(Max):

60 A
Current-CollectorPulsed(Icm):

120 A
Vce(on)(Max)@VgeIc:

2.6V @ 15V, 60A
Power-Max:

348 W
SwitchingEnergy:

-, 1.3mJ (off)
InputType:

Standard
GateCharge:

270 nC
Td(on/off)@25°C:

-
TestCondition:

300V, 60A, 39Ohm, 15V
ReverseRecoveryTime(trr):

-
OperatingTemperature:

175°C (TJ)
MountingType:

Through Hole
Category:

Transistors - IGBTs - Single
Datasheet:

GT30N135SRA,S1E.pdf

GT30N135SRA,S1E Frequently Asked Questions

Is GT30N135SRA,S1E currently in stock? ▼

FudongIC currently shows 2,806 units of GT30N135SRA,S1E in stock. Because electronic component inventory and pricing can change quickly, please submit an RFQ so we can confirm real-time stock, date code, unit price and lead time.

What is the minimum order quantity for GT30N135SRA,S1E? ▼

The minimum order quantity currently shown for GT30N135SRA,S1E is 1. For samples, small-batch orders, volume purchasing or long-term supply, submit an RFQ through FudongIC and we can provide tier pricing based on your actual requirements.

Is GT30N135SRA,S1E original and genuine? ▼

FudongIC has experience in semiconductor distribution and works with global electronic component distributors and spot-stock suppliers in China. We focus on supply-channel review, quality control and traceability. If you need authenticity documentation, date-code information or quality files for GT30N135SRA,S1E, please note this in your RFQ.

Can you provide a datasheet or technical support for GT30N135SRA,S1E? ▼

Yes. You can view or download the GT30N135SRA,S1E.pdf datasheet on this page. If you need pinout information, package details, BOM alternative suggestions or application-selection support for GT30N135SRA,S1E, you can also contact the FudongIC technical and sales team.

Can you recommend alternative parts for GT30N135SRA,S1E? ▼

Yes. Based on your application, preferred manufacturer, package TO-247-3, electrical specifications and lead-time requirements, FudongIC can help evaluate alternatives or related-series parts for GT30N135SRA,S1E. Please submit an RFQ with your original BOM or specification requirements.

Which applications and industries commonly use GT30N135SRA,S1E? ▼

As a Transistors - IGBTs - Single product from Toshiba Semiconductor and Storage, GT30N135SRA,S1E may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.