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PBRN123ES,126 NXP USA Inc.

Part No.:: PBRN123ES,126

Manufacturer:: NXP USA Inc.

Category:: Transistors - Bipolar (BJT) - Single, Pre-Biased

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: PBRN123ES,126.pdf

Description:: TRANS PREBIAS NPN 0.7W TO92-3

Quantity:: RFQ Add to RFQ List Buy Now Add to Cart

Unit Price:Request Quote

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Application Scenarios

What Applications Is PBRN123ES,126 Suitable For?

PBRN123ES,126 is a Transistors - Bipolar (BJT) - Single, Pre-Biased product from NXP USA Inc., suitable for component selection in communications, automotive electronics, industrial control, cloud computing and smart-device projects.

5G Communications & Small-Cell Equipment

Suitable for 5G communications equipment, small-cell base stations and information platforms that require reliable Transistors - Bipolar (BJT) - Single, Pre-Biased components. Engineers can review the PBRN123ES,126 datasheet, package TO-226-3, TO-92-3 (TO-226AA) Formed Leads and stock availability to support component selection.

Automotive & ADAS Electronic Systems

Suitable for automotive, ADAS and vehicle-control systems where original NXP USA Inc. components are required, helping engineers evaluate PBRN123ES,126 specifications, pricing and supply lead time.

Industrial IoT & Automation Control

Suitable for industrial IoT, automation equipment, motor control and embedded-vision systems. Engineers can use the PBRN123ES,126 description, package TO-226-3, TO-92-3 (TO-226AA) Formed Leads and technical specifications for BOM matching.

Cloud Computing & Data Center Platforms

Can be considered for cloud computing, data centers, server platforms and other high-reliability electronic systems. FudongIC supports PBRN123ES,126 datasheet lookup, stock confirmation, pricing requests and one-stop electronic component sourcing.

FudongIC has semiconductor distribution experience and works with global electronic component distributors and spot-stock suppliers in China, supporting component sourcing for 5G communications, aerospace and defense, automotive electronics, industrial control, medical electronics, energy and data-center applications.

Contact FudongIC for PBRN123ES,126 Pricing & Technical Support

Product Overview

PBRN123ES,126 is a Transistors - Bipolar (BJT) - Single, Pre-Biased product from NXP USA Inc.. It is supplied in package TO-226-3, TO-92-3 (TO-226AA) Formed Leads and can be considered for electronic systems where stability, reliability and supply continuity are important. FudongIC can provide PBRN123ES,126 datasheet lookup, stock confirmation, pricing requests, BOM sourcing and component-selection support.

Product Description: TRANS PREBIAS NPN 0.7W TO92-3

Key Features

Part Number:PBRN123ES,126
Manufacturer:NXP USA Inc.
Category:Transistors - Bipolar (BJT) - Single, Pre-Biased
Package:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supports datasheet lookup, stock confirmation and pricing requests
Suitable for samples, small production runs and volume sourcing requirements

Applications

PBRN123ES,126 may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.

Procurement & Technical Support

If you are looking for PBRN123ES,126 stock, volume pricing, lead time, alternative parts or technical documents, you can submit an RFQ through FudongIC. Our sales and technical teams can review your application, specification requirements, package needs and purchase quantity to provide a suitable sourcing option.

Packaging:

Tape & Box (TB)
Series:

-
ProductStatus:

Obsolete
TransistorType:

NPN - Pre-Biased
Current-Collector(Ic)(Max):

800 mA
Voltage-CollectorEmitterBreakdown(Max):

40 V
Resistor-Base(R1):

2.2 kOhms
Resistor-EmitterBase(R2):

2.2 kOhms
DCCurrentGain(hFE)(Min)@IcVce:

280 @ 300mA, 5V
VceSaturation(Max)@IbIc:

1.15V @ 8mA, 800mA
Current-CollectorCutoff(Max):

500nA
Frequency-Transition:

-
Power-Max:

700 mW
MountingType:

Through Hole
Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet:

PBRN123ES,126.pdf

PBRN123ES,126 Frequently Asked Questions

Is PBRN123ES,126 currently in stock? ▼

FudongIC currently shows 3,233 units of PBRN123ES,126 in stock. Because electronic component inventory and pricing can change quickly, please submit an RFQ so we can confirm real-time stock, date code, unit price and lead time.

What is the minimum order quantity for PBRN123ES,126? ▼

The minimum order quantity currently shown for PBRN123ES,126 is 1. For samples, small-batch orders, volume purchasing or long-term supply, submit an RFQ through FudongIC and we can provide tier pricing based on your actual requirements.

Is PBRN123ES,126 original and genuine? ▼

FudongIC has experience in semiconductor distribution and works with global electronic component distributors and spot-stock suppliers in China. We focus on supply-channel review, quality control and traceability. If you need authenticity documentation, date-code information or quality files for PBRN123ES,126, please note this in your RFQ.

Can you provide a datasheet or technical support for PBRN123ES,126? ▼

Yes. You can view or download the PBRN123ES,126.pdf datasheet on this page. If you need pinout information, package details, BOM alternative suggestions or application-selection support for PBRN123ES,126, you can also contact the FudongIC technical and sales team.

Can you recommend alternative parts for PBRN123ES,126? ▼

Yes. Based on your application, preferred manufacturer, package TO-226-3, TO-92-3 (TO-226AA) Formed Leads, electrical specifications and lead-time requirements, FudongIC can help evaluate alternatives or related-series parts for PBRN123ES,126. Please submit an RFQ with your original BOM or specification requirements.

Which applications and industries commonly use PBRN123ES,126? ▼

As a Transistors - Bipolar (BJT) - Single, Pre-Biased product from NXP USA Inc., PBRN123ES,126 may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.