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RN2106MFV,L3F(CT Toshiba Semiconductor and Storage

Part No.:: RN2106MFV,L3F(CT

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Transistors - Bipolar (BJT) - Single, Pre-Biased

Package:: SOT-723

Datasheet:: RN2106MFV,L3F(CT.pdf

Description:: TRANS PREBIAS PNP 50V 0.1A VESM

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Application Scenarios

What Applications Is RN2106MFV,L3F(CT Suitable For?

RN2106MFV,L3F(CT is a Transistors - Bipolar (BJT) - Single, Pre-Biased product from Toshiba Semiconductor and Storage, suitable for component selection in communications, automotive electronics, industrial control, cloud computing and smart-device projects.

5G Communications & Small-Cell Equipment

Suitable for 5G communications equipment, small-cell base stations and information platforms that require reliable Transistors - Bipolar (BJT) - Single, Pre-Biased components. Engineers can review the RN2106MFV,L3F(CT datasheet, package SOT-723 and stock availability to support component selection.

Automotive & ADAS Electronic Systems

Suitable for automotive, ADAS and vehicle-control systems where original Toshiba Semiconductor and Storage components are required, helping engineers evaluate RN2106MFV,L3F(CT specifications, pricing and supply lead time.

Industrial IoT & Automation Control

Suitable for industrial IoT, automation equipment, motor control and embedded-vision systems. Engineers can use the RN2106MFV,L3F(CT description, package SOT-723 and technical specifications for BOM matching.

Cloud Computing & Data Center Platforms

Can be considered for cloud computing, data centers, server platforms and other high-reliability electronic systems. FudongIC supports RN2106MFV,L3F(CT datasheet lookup, stock confirmation, pricing requests and one-stop electronic component sourcing.

FudongIC has semiconductor distribution experience and works with global electronic component distributors and spot-stock suppliers in China, supporting component sourcing for 5G communications, aerospace and defense, automotive electronics, industrial control, medical electronics, energy and data-center applications.

Contact FudongIC for RN2106MFV,L3F(CT Pricing & Technical Support

Product Overview

RN2106MFV,L3F(CT is a Transistors - Bipolar (BJT) - Single, Pre-Biased product from Toshiba Semiconductor and Storage. It is supplied in package SOT-723 and can be considered for electronic systems where stability, reliability and supply continuity are important. FudongIC can provide RN2106MFV,L3F(CT datasheet lookup, stock confirmation, pricing requests, BOM sourcing and component-selection support.

Product Description: TRANS PREBIAS PNP 50V 0.1A VESM

Key Features

Part Number:RN2106MFV,L3F(CT
Manufacturer:Toshiba Semiconductor and Storage
Category:Transistors - Bipolar (BJT) - Single, Pre-Biased
Package:SOT-723
Supports datasheet lookup, stock confirmation and pricing requests
Suitable for samples, small production runs and volume sourcing requirements

Applications

RN2106MFV,L3F(CT may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.

Procurement & Technical Support

If you are looking for RN2106MFV,L3F(CT stock, volume pricing, lead time, alternative parts or technical documents, you can submit an RFQ through FudongIC. Our sales and technical teams can review your application, specification requirements, package needs and purchase quantity to provide a suitable sourcing option.

Packaging:

Tape & Reel (TR),Cut Tape (CT)
Series:

-
ProductStatus:

Active
TransistorType:

PNP - Pre-Biased
Current-Collector(Ic)(Max):

100 mA
Voltage-CollectorEmitterBreakdown(Max):

50 V
Resistor-Base(R1):

4.7 kOhms
Resistor-EmitterBase(R2):

47 kOhms
DCCurrentGain(hFE)(Min)@IcVce:

80 @ 10mA, 5V
VceSaturation(Max)@IbIc:

300mV @ 500µA, 5mA
Current-CollectorCutoff(Max):

500nA
Frequency-Transition:

250 MHz
Power-Max:

150 mW
MountingType:

Surface Mount
Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet:

RN2106MFV,L3F(CT.pdf

RN2106MFV,L3F(CT Frequently Asked Questions

Is RN2106MFV,L3F(CT currently in stock? ▼

FudongIC currently shows 2,006 units of RN2106MFV,L3F(CT in stock. Because electronic component inventory and pricing can change quickly, please submit an RFQ so we can confirm real-time stock, date code, unit price and lead time.

What is the minimum order quantity for RN2106MFV,L3F(CT? ▼

The minimum order quantity currently shown for RN2106MFV,L3F(CT is 1. For samples, small-batch orders, volume purchasing or long-term supply, submit an RFQ through FudongIC and we can provide tier pricing based on your actual requirements.

Is RN2106MFV,L3F(CT original and genuine? ▼

FudongIC has experience in semiconductor distribution and works with global electronic component distributors and spot-stock suppliers in China. We focus on supply-channel review, quality control and traceability. If you need authenticity documentation, date-code information or quality files for RN2106MFV,L3F(CT, please note this in your RFQ.

Can you provide a datasheet or technical support for RN2106MFV,L3F(CT? ▼

Yes. You can view or download the RN2106MFV,L3F(CT.pdf datasheet on this page. If you need pinout information, package details, BOM alternative suggestions or application-selection support for RN2106MFV,L3F(CT, you can also contact the FudongIC technical and sales team.

Can you recommend alternative parts for RN2106MFV,L3F(CT? ▼

Yes. Based on your application, preferred manufacturer, package SOT-723, electrical specifications and lead-time requirements, FudongIC can help evaluate alternatives or related-series parts for RN2106MFV,L3F(CT. Please submit an RFQ with your original BOM or specification requirements.

Which applications and industries commonly use RN2106MFV,L3F(CT? ▼

As a Transistors - Bipolar (BJT) - Single, Pre-Biased product from Toshiba Semiconductor and Storage, RN2106MFV,L3F(CT may be used in projects involving 5G communications, aerospace and defense, automotive electronics, industrial IoT, wireless embedded vision, cloud computing, data centers, medical electronics, motor control, automation, energy and building technologies, subject to the requirements of the specific design.