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Diodes - Rectifiers - Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
G3S06504B

G3S06504B

SIC SCHOTTKY DIODE 650V 4A 3-PIN

Global Power Technology-GPT 		2,822 -

RFQ

G3S06504B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 9A (DC) 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G3S06506B

G3S06506B

SIC SCHOTTKY DIODE 650V 6A 3-PIN

Global Power Technology-GPT 		3,072 -

RFQ

G3S06506B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 14A (DC) 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G3S06508B

G3S06508B

SIC SCHOTTKY DIODE 650V 8A 3-PIN

Global Power Technology-GPT 		3,870 -

RFQ

G3S06508B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 14A (DC) 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G3S06512B

G3S06512B

SIC SCHOTTKY DIODE 650V 12A 3-PI

Global Power Technology-GPT 		2,132 -

RFQ

G3S06512B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 27A (DC) 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G3S12004B

G3S12004B

SIC SCHOTTKY DIODE 1200V 4A 3-PI

Global Power Technology-GPT 		3,052 -

RFQ

G3S12004B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 8.5A (DC) 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G3S06510B

G3S06510B

SIC SCHOTTKY DIODE 650V 10A 3-PI

Global Power Technology-GPT 		2,864 -

RFQ

G3S06510B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 27A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G4S06516BT

G4S06516BT

SIC SCHOTTKY DIODE 650V 16A 3-PI

Global Power Technology-GPT 		3,219 -

RFQ

G4S06516BT

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 25.9A (DC) 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G3S12006B

G3S12006B

SIC SCHOTTKY DIODE 1200V 6A 3-PI

Global Power Technology-GPT 		2,610 -

RFQ

G3S12006B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 14A (DC) 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V -55°C ~ 175°C Through Hole
G3S06516B

G3S06516B

SIC SCHOTTKY DIODE 650V 16A 3-PI

Global Power Technology-GPT 		3,394 -

RFQ

G3S06516B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 25.5A (DC) 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G4S06520BT

G4S06520BT

SIC SCHOTTKY DIODE 650V 20A 3-PI

Global Power Technology-GPT 		3,140 -

RFQ

G4S06520BT

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 31.2A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G5S12016B

G5S12016B

SIC SCHOTTKY DIODE 1200V 16A 3-P

Global Power Technology-GPT 		2,171 -

RFQ

G5S12016B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 27.9A (DC) 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G5S12010BM

G5S12010BM

SIC SCHOTTKY DIODE 1200V 10A 3-P

Global Power Technology-GPT 		2,302 -

RFQ

G5S12010BM

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 19.35A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G5S12016BM

G5S12016BM

SIC SCHOTTKY DIODE 1200V 16A 3-P

Global Power Technology-GPT 		2,995 -

RFQ

G5S12016BM

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 27.9A (DC) 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G3S12010BM

G3S12010BM

SIC SCHOTTKY DIODE 1200V 10A 3-P

Global Power Technology-GPT 		2,069 -

RFQ

G3S12010BM

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 19.8A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G3S12010B

G3S12010B

SIC SCHOTTKY DIODE 1200V 10A 3-P

Global Power Technology-GPT 		3,360 -

RFQ

G3S12010B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 39A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G4S06530BT

G4S06530BT

SIC SCHOTTKY DIODE 650V 30A 3-PI

Global Power Technology-GPT 		2,591 -

RFQ

G4S06530BT

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 39A (DC) 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V -55°C ~ 175°C Through Hole
G5S12020BM

G5S12020BM

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT 		2,878 -

RFQ

G5S12020BM

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 33A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V -55°C ~ 175°C Through Hole
G3S12020B

G3S12020B

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT 		2,614 -

RFQ

G3S12020B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 37A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G5S12020B

G5S12020B

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT 		2,438 -

RFQ

G5S12020B

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 33A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V -55°C ~ 175°C Through Hole
G4S12020BM

G4S12020BM

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT 		2,347 -

RFQ

G4S12020BM

Datasheet

 Cut Tape (CT),Tape & Box (TB) - Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 33.2A (DC) 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V -55°C ~ 175°C Through Hole
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