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Diodes - Rectifiers - Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G3S06540BSIC SCHOTTKY DIODE 650V 40A 3-PI Global Power Technology-GPT |
2,423 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 60A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12030BMSIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT |
3,075 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 55A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S17010BSIC SCHOTTKY DIODE 1700V 10A 3-P Global Power Technology-GPT |
2,967 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 29.5A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | Through Hole |
|
|
G3S06560BSIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT |
2,544 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 95A (DC) | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12030BSIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT |
2,618 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 42A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
G5S12040PPSIC SCHOTTKY DIODE 1200V 40A 2-P Global Power Technology-GPT |
3,902 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Anode | Silicon Carbide Schottky | 1200 V | 115A (DC) | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12040BMSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT |
2,687 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 62A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S12040BSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT |
3,726 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 64.5A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G5S12040BSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT |
2,690 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 62A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
|
G3S17020BSIC SCHOTTKY DIODE 1700V 20A 3-P Global Power Technology-GPT |
3,350 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 24A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | Through Hole |
|
|
G4S12040BMSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT |
3,476 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 64.5A (DC) | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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