| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB150-E3/54DIODE SCHOTTKY 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
4,986 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 650 mV @ 1 A | |
|
RGP15AR-50V 1.5A FAST SW NTE Electronics, Inc |
2,092 | - |
RFQ |
Datasheet |
Bag | RGP15 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | - | 1.3 V @ 1.5 A |
|
SE20FGHM3/IDIODE GEN PURP 400V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
4,963 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 400 V | 400 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
FM240-MH-HSCHOTTKY BARRIER 40V, 2000MA Formosa Microsemi Co., Ltd. |
200,000 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 2A (Io) | Schottky | Active | Surface Mount | - | - | 500 mA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A | ||
|
HSB83JTLDIODE FOR HIGH VOLTAGE SWITCHING Rochester Electronics, LLC |
93,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
RS3J-13-FDIODE GEN PURP 600V 3A SMC Diodes Incorporated |
1,652 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
PMEG100T030ELPE-QZPMEG100T030ELPE-Q/SOT1289B/CFP Nexperia USA Inc. |
4,900 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 410pF @ 1V, 1MHz | 12 ns | 2.5 µA @ 100 V | 100 V | 3A | 175°C | 710 mV @ 3 A | |
|
UH1DHE3_A/IDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.05 V @ 1 A |
|
|
S1BL RQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,712 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SBR05U40CSP-7DIODE SBR 40V 500MA WLB1006 Diodes Incorporated |
2,608 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | 34pF @ 4V, 1MHz | - | 75 µA @ 40 V | 40 V | 500mA | -55°C ~ 150°C | 460 mV @ 500 mA |
|
|
S1BL RTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,902 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
1N4001GPHE3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,689 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1BLHMQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,738 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
SS26HE3/5BTDIODE SCHOTTKY 60V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,623 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 125°C | 700 mV @ 2 A | |
|
|
S1BLHMTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,899 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
SS2PH10HM3/84ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,628 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
S1BLHRQGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
UH6PJ-M3/86ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,332 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 30pF @ 4V, 1MHz | 45 ns | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 3 V @ 6 A |
|
|
S1BLHRTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,330 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
FERD30S50DJF-TRDIODE RECT 50V 30A POWERFLAT STMicroelectronics |
3,655 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Obsolete | Surface Mount | - | - | 800 µA @ 50 V | 50 V | 30A | 150°C (Max) | 470 mV @ 15 A |