| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
S1DL MQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-20ETF02SPBFDIODE GEN PURP 200V 20A TO263 Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 160 ns | 100 µA @ 650 V | 200 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A | |
|
|
S1DL MTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,406 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-20ETF12SPBFDIODE GEN PURP 1.2KV 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,678 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
|
S1DL RQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,170 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-MBRB1045PBFDIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,817 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 600pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
S1DL RTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,574 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-8ETU04STRLPBFDIODE GEN PURP 400V 8A TO262 Vishay General Semiconductor - Diodes Division |
2,421 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
|
S1DLHMQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,383 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
CMPSH1-4 TR PBFREEDIODE SCHOTTKY 40V 1.75A SOT23F Central Semiconductor Corp |
3,653 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 25pF @ 25V, 1MHz | 12 ns | 100 µA @ 30 V | 40 V | 1.75A | -65°C ~ 150°C | 620 mV @ 1.5 A | |
|
|
S1DLHMTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,113 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
SB5200SCHOTTKY DO-201 200V 5A Diotec Semiconductor |
1,700 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A | -50°C ~ 150°C | 900 mV @ 5 A | |
|
S1PM-M3/84ADIODE GEN PURP 1KV 1A DO220AA Vishay General Semiconductor - Diodes Division |
4,830 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
FM160-MH1-Q1-HSCHOTTKY BARRIER 60V, 1000MA Formosa Microsemi Co., Ltd. |
240,000 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 1A (Io) | Schottky | Active | Surface Mount | - | - | 500 mA @ 60 V | 40 V | 1A | -55°C ~ 125°C | 700 mV @ 1 A | ||
|
HSB83TR-EDIODE FOR HIGH VOLTAGE SWITCHING Rochester Electronics, LLC |
75,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
SB520-E3/54DIODE SCHOTTKY 20V 5A DO201AD Vishay General Semiconductor - Diodes Division |
1,120 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
|
STTH1L06RLDIODE GEN PURP 600V 1A DO41 STMicroelectronics |
4,375 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 1 µA @ 600 V | 600 V | 1A | 175°C (Max) | 1.3 V @ 1 A | |
|
BY1800DIODE STD DO-201 1800V 3A Diotec Semiconductor |
1,700 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 1800 V | 1800 V | 3A | -50°C ~ 150°C | 1.1 V @ 3 A | |
|
RS1MFast Recovery SMA 1KV 1A NextGen Components |
5,588,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
1N4933GPRECTIFIER DIODE Rochester Electronics, LLC |
44,102 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 12pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |