| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S4B R7GDIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation |
3,465 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
D721S45TXPSA1DIODE GEN PURP 4.5KV 1080A Infineon Technologies |
2,749 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 140 mA @ 4500 V | 4500 V | 1080A | -40°C ~ 125°C | 3.5 V @ 2500 A | |
|
HSC119JTRF-EHSC119 - RECTIFIER DIODE, 1 ELEM Rochester Electronics, LLC |
80,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SL1GST Rect, 400V, 1A DComponents |
783,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1 µs | 1 µA @ 400 V | 400 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
BYM36E-TAPDIODE AVALANCHE 1KV 2.9A SOD64 Vishay General Semiconductor - Diodes Division |
2,271 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 150 ns | 5 µA @ 1000 V | 1000 V | 2.9A | -55°C ~ 175°C | 1.78 V @ 3 A | |
|
RHRU5060RECTIFIER DIODE Rochester Electronics, LLC |
734 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Chassis Mount | - | 50 ns | 500 µA @ 600 V | 600 V | 50A | -65°C ~ 175°C | 2.1 V @ 50 A | |
|
BYC75W-1200PQSTANDARD MARKING * HORIZONTAL, R WeEn Semiconductors |
2,890 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 85 ns | 250 µA @ 1200 V | 1200 V | 75A | 175°C (Max) | - | |
|
SBT10100SchottkyD, 100V, 10A DComponents |
19,414 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 10A | -50°C ~ 150°C | 850 mV @ 10 A | |
|
SB10-04A3-BTSB10-04A3 - SCHOTTKY DIODE 1A 40 Rochester Electronics, LLC |
48,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 45pF @ 10V, 1MHz | - | 800 µA @ 40 V | 40 V | 1A | 125°C (Max) | 550 mV @ 1 A | |
|
SL1DST Rect, 200V, 1A DComponents |
402,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1 µs | 1 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
TSUP15M45SH S1G15A, 45V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
2,978 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1803pF @ 4V, 1MHz | - | 350 µA @ 45 V | 45 V | 15A (DC) | -55°C ~ 175°C | 600 mV @ 15 A |
|
NXPSC04650X6QDIODE SCHOTTKY 650V 4A TO220F WeEn Semiconductors |
2,998 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
UJ3D1210KSD1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC |
571 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.6 V @ 5 A | |
|
PX1500AST Rect, 50V, 15A DComponents |
2,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 50 V | 50 V | 15A | -50°C ~ 175°C | 1 V @ 15 A | |
|
1N5818T/RDIODE SCHOTTKY 30V 1A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
SL1BST Rect, 100V, 1A DComponents |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1 µs | 1 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
TSUP15M60SH S1G15A, 60V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
2,511 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1046pF @ 4V, 1MHz | - | 450 µA @ 60 V | 60 V | 15A (DC) | -55°C ~ 175°C | 640 mV @ 15 A |
|
RURG8070RECTIFIER DIODE Rochester Electronics, LLC |
977 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 500 µA @ 700 V | 700 V | 80A | -65°C ~ 175°C | 1.9 V @ 80 A | |
|
UJ3D1210KS1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC |
420 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
|
IDW15E65D2IDW15E65 - SILICON POWER DIODE Rochester Electronics, LLC |
19,680 | - |
RFQ |
Datasheet |
Bulk | CoolSiC™+ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 47 ns | 40 µA @ 650 V | 650 V | 30A | -40°C ~ 175°C | 2.3 V @ 15 A |