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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SK56C R7G DIODE SCHOTTKY 60V 5A DO214AB Taiwan Semiconductor Corporation	2,186	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	750 mV @ 5 A
D471N80TXPSA1 DIODE GEN PURP 8KV 760A Infineon Technologies	2,788	-	RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Chassis Mount	-	-	50 mA @ 8000 V	8000 V	760A	-40°C ~ 160°C	3.2 V @ 1200 A
SK810C R7G DIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation	3,381	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 100 V	100 V	8A	-55°C ~ 150°C	900 mV @ 8 A
D471N85TXPSA1 DIODE GEN PURP 8.5KV 760A Infineon Technologies	2,543	-	RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Chassis Mount	-	-	50 mA @ 8500 V	8500 V	760A	-40°C ~ 160°C	3.2 V @ 1200 A
SK86C R7G DIODE SCHOTTKY 60V 8A DO214AB Taiwan Semiconductor Corporation	2,570	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 60 V	60 V	8A	-55°C ~ 150°C	750 mV @ 8 A
D450S16TXPSA1 DIODE GEN PURP 1.6KV 443A Infineon Technologies	3,220	-	RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Chassis Mount	-	6.2 µs	10 mA @ 1600 V	1600 V	443A	-25°C ~ 180°C	2.25 V @ 1200 A
S4D10120A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	300	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	772pF @ 0V, 1MHz	0 ns	30 µA @ 1200 V	1200 V	10A	-55°C ~ 175°C	1.8 V @ 10 A
SBJ1845-3G Schottky D, 45V, 18A DComponents	1,195	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 45 V	45 V	18A	-50°C ~ 150°C	550 mV @ 18 A
S3DSMB ST Rect, 200V, 3A DComponents	9,000	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 200 V	200 V	3A	-50°C ~ 150°C	1.1 V @ 3 A
M7F General Diode SMAF 1KV 1A NextGen Components	7,266,000	-	RFQ	Datasheet	Tape & Reel (TR)	SMAF	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	15pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
BYV28-600-TAP DIODE AVALANCHE 600V 3.5A SOD64 Vishay General Semiconductor - Diodes Division	2,414	-	RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	210 ns	5 µA @ 600 V	600 V	3.5A	-55°C ~ 175°C	1.35 V @ 5 A
TRS6A65F,S1Q PB-F DIODE TO-220-2L V=650 IF=6A Toshiba Semiconductor and Storage	155	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	22pF @ 650V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.6 V @ 6 A
WNSC2D151200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1,900	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	700pF @ 1V, 1MHz	0 ns	150 µA @ 1200 V	1200 V	15A	175°C	1.7 V @ 15 A
1N5408 GEN PURP 1KV 3.0A DO27 NextGen Components	118,000	-	RFQ	Datasheet	Tape & Box (TB)	DO-27	RoHS	-	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	-	1000 V	3A	-65°C ~ 150°C	1.2 V @ 3 A
SM4005 Std Rect, 600V, 1A DComponents	4,970	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 600 V	600 V	1A	-50°C ~ 175°C	1.1 V @ 1 A
M1 RECTIFIER DIODE 50V 1A SMA NextGen Components	1,425,000	-	RFQ	Datasheet	Tape & Reel (TR)	SMA	RoHS	-	Standard	Active	Surface Mount	15pF @ 4V, 1MHz	-	-	50 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
BYW76TAP DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,304	-	RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
16F120 RECT , 16 AMP 1200V KK DO4 Solid State Inc.	2,446	-	RFQ	Datasheet	Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Stud Mount	-	-	10 µA @ 1200 V	1200 V	16A	-65°C ~ 150°C	1.2 V @ 16 A
UJ3D1210K2 1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	435	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
1N5404 GEN PURP 400V 3.0A DO27 NextGen Components	14,000	-	RFQ	Datasheet	Tape & Box (TB)	DO-27	RoHS	-	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	-	400 V	3A	-65°C ~ 150°C	1.2 V @ 3 A