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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RL205GP-APDIODE GEN PURP 600V 2A DO15 Micro Commercial Co |
2,483 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 600 V | 2A | -55°C ~ 150°C | - | |
|
BYG20J-7001HE3_A/IDIODE AVALANCHE 600V SMA Vishay General Semiconductor - Diodes Division |
3,073 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
|
RL206GP-APDIODE GEN PURP 800V 2A DO15 Micro Commercial Co |
3,918 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 800 V | 2A | -55°C ~ 150°C | - | |
|
|
LL4001G L0DIODE GEN PURP 50V 1A MELF Taiwan Semiconductor Corporation |
2,371 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
RL207GP-APDIODE GEN PURP 1KV 2A DO15 Micro Commercial Co |
2,099 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 1000 V | 2A | -55°C ~ 150°C | - | |
|
|
LL4002G L0DIODE GEN PURP 100V 1A MELF Taiwan Semiconductor Corporation |
3,383 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
SF34G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
2,620 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | - | 200 V | 3A | -65°C ~ 150°C | - | |
|
|
FR151GP-APDIODE GPP FAST 1.5A DO-15 Micro Commercial Co |
2,949 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | - | 50 V | 1.5A | -55°C ~ 150°C | - | |
|
|
FR152GP-APDIODE GPP FAST 1.5A DO-15 Micro Commercial Co |
2,883 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | - | 100 V | 1.5A | -55°C ~ 150°C | - | |
|
|
FR153GP-APDIODE GPP FAST 1.5A DO-15 Micro Commercial Co |
3,571 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | - | 200 V | 1.5A | -55°C ~ 150°C | - | |
|
|
FR154GP-APDIODE GPP FAST 1.5A DO-15 Micro Commercial Co |
3,204 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | - | 400 V | 1.5A | -55°C ~ 150°C | - | |
|
SS32SCHOTTKY DIODE SMA 20V 3A NextGen Components |
80,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | - |
|
1SS5004WSDIODE SOD-323 400V 0.22A 100NS DComponents |
3,559 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 100 ns | 100 nA @ 240 V | 400 V | 225mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
PCDP1065G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,990 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 364pF @ 1V, 1MHz | 0 ns | 70 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A | |
|
NXPSC126506QSILICON CARBIDE POWER DIODE WeEn Semiconductors |
2,984 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | ||
|
BY550-800-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
8,750 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 800 V | 800 V | 5A | -50°C ~ 175°C | 1 V @ 5 A | |
|
FT2000KGFast Rect., 400V, 20.00A, 200ns DComponents |
1,000 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 20A | -50°C ~ 150°C | 960 mV @ 20 A | |
|
SKL15SchottkyD, 50V, 1A DComponents |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 700 mV @ 1 A | |
|
FM140-MH-HSCHOTTKY BARRIER 40V, 1000MA Formosa Microsemi Co., Ltd. |
222,000 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 1A (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 500 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | ||
|
|
WNSC6D08650QSILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors |
3,000 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 402pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A | 175°C | 1.4 V @ 8 A |
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