| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SM4006Std Rect, 800V, 1A DComponents |
4,934 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 800 V | 800 V | 1A | -50°C ~ 175°C | 1.1 V @ 1 A | |
|
ES1JFSuper Fast Diode SMAF 600V 1A NextGen Components |
1,233,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMAF | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
BYW86TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
1,065 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 1000 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
RHRU50100RECTIFIER DIODE Rochester Electronics, LLC |
280 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Chassis Mount | - | 95 ns | 500 µA @ 1000 V | 1000 V | 50A | -65°C ~ 175°C | 3 V @ 50 A | |
|
NTE517D-15KV FOR MICROWAVE OVEN NTE Electronics, Inc |
1,384 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 15000 V | 15000 V | 550mA | -65°C ~ 150°C | 14 V @ 550 mA | |
|
DD1600HV Rect, 16000V, 0.02A, 150ns DComponents |
160,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 16000 V | 16000 V | 20mA | -50°C ~ 150°C | 40 V @ 10 mA | |
|
SM4004Std Rect, 400V, 1A DComponents |
3,794 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 400 V | 400 V | 1A | -50°C ~ 175°C | 1.1 V @ 1 A | |
|
US1MFHigh Efficiency SMAF 1KV 1A NextGen Components |
684,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMAF | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
NTE5815HCR-SI 600V 10AMP NTE Electronics, Inc |
5,589 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 125°C | 1 V @ 10 A | |
|
NTE5820R-400 PRV 12A CATH CASE NTE Electronics, Inc |
132 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 400 ns | 25 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
GBPC1208BRIDGE RECTIFIER DIODE, 1 PHASE, Rochester Electronics, LLC |
500 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
EGL1ASF Rect, 50V, 1.00A, 50ns DComponents |
2,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 50 V | 50 V | 1A | -50°C ~ 175°C | 1.25 V @ 1 A | |
|
M4RECTIFIER DIODE 400V 1A SMA NextGen Components |
465,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | - | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | - | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
GI850/MR850R- 50 PRV 3A NTE Electronics, Inc |
552 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.25 V @ 3 A | |
|
GP3D020A065ASIC SCHOTTKY DIODE 650V TO220 SemiQ |
497 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1247pF @ 1V, 1MHz | - | 75 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.65 V @ 30 A |
|
BY550-600-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
368,750 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 600 V | 600 V | 5A | -50°C ~ 175°C | 1 V @ 5 A | |
|
DO41N4007GA10AGENERAL DIODE DO-41 1KV 1A NextGen Components |
430,000 | - |
RFQ |
Datasheet |
Tape & Box (TB) | DO-41 | RoHS | - | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A |
|
GE08MPS06A650V 8A TO-220-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
2,000 | - |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 373pF @ 1V, 1MHz | - | - | 650 V | 15A (DC) | -55°C ~ 175°C | - |
|
IDFW80C65D1XKSA1IDFW80C65D1XKSA1 Infineon Technologies |
191 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 73 ns | 40 µA @ 650 V | 650 V | 74A (DC) | -40°C ~ 175°C | 1.7 V @ 40 A |
|
PX1500GST Rect, 400V, 15A DComponents |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 15A | -50°C ~ 175°C | 1 V @ 15 A |