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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
HER105G-APDIODE GPP HE 1A DO-41 Micro Commercial Co |
3,477 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 50 ns | - | 400 V | 1A | -55°C ~ 125°C | - | |
|
HS3B M6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,336 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER106G-APDIODE GPP HE 1A DO-41 Micro Commercial Co |
3,247 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | - | 600 V | 1A | -55°C ~ 125°C | - | |
|
|
HS3D M6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,230 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER107G-APDIODE GPP HE 1A DO-41 Micro Commercial Co |
2,408 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | - | 800 V | 1A | -55°C ~ 125°C | - | |
|
|
HS3F M6GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER108G-APDIODE GPP HE 1A DO-41 Micro Commercial Co |
2,532 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | - | 1000 V | 1A | -55°C ~ 125°C | - | |
|
|
HS3G M6GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,605 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
HER201G-APDIODE GPP HE 2A DO-15 Micro Commercial Co |
2,432 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | - | 50 V | 2A | -55°C ~ 150°C | - | |
|
|
HS3J M6GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,341 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER202G-APDIODE GPP HE 2A DO-15 Micro Commercial Co |
3,413 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | - | 100 V | 2A | -55°C ~ 150°C | - | |
|
|
HS3K M6GDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,039 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER203G-APDIODE GPP HE 2A DO-15 Micro Commercial Co |
2,955 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | - | 200 V | 2A | -55°C ~ 150°C | - | |
|
|
HS3M M6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,659 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER204G-APDIODE GPP HE 2A DO-15 Micro Commercial Co |
3,432 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | - | 300 V | 2A | -55°C ~ 150°C | - | |
|
P2000MTLST Rect, 1000V, 20A DComponents |
1,450 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1000 V | 1000 V | 20A | -50°C ~ 175°C | 1.1 V @ 20 A | |
|
SCS210AGHRCDIODE SCHOTTKY 650V 10A TO-220-2 Rohm Semiconductor |
798 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 365pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 650 V | 10A (DC) | 175°C (Max) | 1.55 V @ 10 A |
|
BAV21WSWITCHING 250V 250MA SOD-123 NextGen Components |
915,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SOD-123 | RoHS | - | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 50 ns | - | 250 V | 250mA | -55°C ~ 150°C | 1.25 V @ 200 mA |
|
FR307T/RDIODE GEN PURP 1000V 3A DO201AD EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 10 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
NXPSC16650B6JSILICON CARBIDE POWER DIODE WeEn Semiconductors |
3,196 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 534pF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 16A | 175°C (Max) | 1.7 V @ 16 A |
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