| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SF31G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
2,450 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | - | 50 V | 3A | -65°C ~ 150°C | - | |
|
SK1840D2RSchottkyD, 40V, 18A DComponents |
61,600 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 18A | -50°C ~ 150°C | 580 mV @ 18 A | |
|
HS5M M6GDIODE GEN PURP 5A DO214AB Taiwan Semiconductor Corporation |
3,036 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
NTE581R-SI 400V 8A FAST REC NTE Electronics, Inc |
1,604 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A | |
|
|
SF32G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,831 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | - | 100 V | 3A | -65°C ~ 150°C | - | |
|
FM340-MST-HSCHOKTTY DIODE Formosa Microsemi Co., Ltd. |
240,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 3A (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | - | 3A | -55°C ~ 125°C | 550 mV @ 3000 mA | |
|
MUR305S M6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,046 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | |
|
SF28-T/RSUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC. |
6,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 20 µA @ 800 V | 800 V | 2A | -65°C ~ 150°C | 4 V @ 2 A | |
|
PCDP15120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 815pF @ 1V, 1MHz | 0 ns | 140 µA @ 1200 V | 1200 V | 15A (DC) | -55°C ~ 175°C | 1.7 V @ 15 A | |
|
IDDD06G65C6XTMA1SIC DIODES Rochester Electronics, LLC |
2,720 | - |
RFQ |
Datasheet |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 1V, 1MHz | 0 ns | 20 µA @ 420 V | 650 V | 18A (DC) | -55°C ~ 175°C | - |
|
BY880-50-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
1,235 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 50 V | 50 V | 8A | -50°C ~ 175°C | 1.1 V @ 8 A | |
|
RHRU50120RECTIFIER DIODE Rochester Electronics, LLC |
425 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Chassis Mount | - | 100 ns | 500 µA @ 1200 V | 1200 V | 50A | -65°C ~ 175°C | 3.2 V @ 50 A | |
|
|
SF35G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
2,739 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 300 V | 3A | -65°C ~ 150°C | - | |
|
S1MRECTIFIER DIODE, 1A, 1000V, DO-2 Rochester Electronics, LLC |
1,863,721 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
MUR305SHM6GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,558 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A |
|
SK15SCHOTTKY BARRIER RECTIFIER DIODE EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 1A | -40°C ~ 125°C | 500 mV @ 1 A | |
|
|
SF36G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,570 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 400 V | 3A | -65°C ~ 150°C | - | |
|
MUR310S M6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,176 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | |
|
WNSC6D20650WQSILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors |
1,180 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.2nF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 20A | 175°C | 1.4 V @ 20 A | ||
|
|
SF38G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,172 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 600 V | 3A | -65°C ~ 150°C | - |