| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
HS1AL R3GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,359 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
BAS581-02V-V-G-08DIODE SCHOTTKY 40V 200MA SOD523 Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 2pF @ 1V, 1MHz | - | 500 nA @ 30 V | 40 V | 200mA | 125°C (Max) | 370 mV @ 1 mA | ||
|
|
HS1AL RFGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,740 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
BAT54-02V-V-G-18DIODE SCHOTTKY 30V 200MA SOD523 Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | BAT | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
|
|
HS1BL R3GDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,832 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
SS36HE3_A/IDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,329 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
V10WM100-M3/IDIODE SCHOTTKY 10A 100V DPAK Vishay General Semiconductor - Diodes Division |
3,151 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 750 mV @ 10 A | |
|
|
HS1BL RFGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
CN645 BKDIODE GEN PURP 225V 400MA DO41 Central Semiconductor Corp |
3,376 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 11pF @ 12V, 1MHz | - | 200 nA @ 225 V | 225 V | 400mA | -65°C ~ 150°C | 1 V @ 400 mA | |
|
|
HS1DL R3GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,583 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES15DLW RVGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,787 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 24pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 950 mV @ 1.5 A | |
|
|
HS1DL RFGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,184 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
PAD100DFN 8LDIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc. |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | PAD-DFN | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 1.5pF @ 5V, 1MHz | - | 100 pA @ 20 V | 30 V | 10mA | -55°C ~ 150°C | 1.5 V @ 5 mA |
|
P600M-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
241,500 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1000 V | 1000 V | 6A | -50°C ~ 175°C | 1.1 V @ 6 A | |
|
FE3ASF Rect, 50V, 3.00A, 50ns DComponents |
1,700 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 175°C | 980 mV @ 3 A | |
|
RB068LAM150TFTRAUTOMOTIVE SCHOTTKY BARRIER DIOD Rohm Semiconductor |
2,455 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 µA @ 150 V | 150 V | 2A | 150°C (Max) | - |
|
NTE649GR-1A 400V 150NS SMT CASE NTE Electronics, Inc |
6,190 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
RRE07VTM6SFHTRRECTIFIER DIODES (CORRESPONDS TO Rohm Semiconductor |
3,752 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 600 V | 600 V | 700mA | 150°C (Max) | 1.1 V @ 700 mA |
|
IDH16S60CAKSA1SIC DIODES Rochester Electronics, LLC |
14,166 | - |
RFQ |
Datasheet |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 650pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
FEPF16DTDIODE GEN PURP 200V 16A ITO220AB EIC SEMICONDUCTOR INC. |
530 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A |