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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HS1ML RFGDIODE GEN PURP 1A SUB SMA Taiwan Semiconductor Corporation |
3,031 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
S1GLSHRVGDIODE, 1.2A, 400V, AEC-Q101, SOD Taiwan Semiconductor Corporation |
3,272 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 400 V | 400 V | 1.2A | -55°C ~ 175°C | 1.3 V @ 1.2 A |
|
HS2A R5GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
3,266 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SRF10200HC0GDIODE, SCHOTTKY, STANDARD, 10A, Taiwan Semiconductor Corporation |
2,516 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 1 V @ 5 A |
|
|
HS2B R5GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,781 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
GPA801DT-TPDIODE GPP 8A D2PAK Micro Commercial Co |
2,357 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.1 V @ 8 A | |
|
|
HS2D R5GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
GPA802DT-TPDIODE GPP 8A D2PAK Micro Commercial Co |
2,131 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.1 V @ 8 A | |
|
|
HS2F R5GDIODE GEN PURP 300V 2A DO214AA Taiwan Semiconductor Corporation |
2,334 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
GPA803DT-TPDIODE GPP 8A D2PAK Micro Commercial Co |
3,278 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.1 V @ 8 A | |
|
|
HS2G R5GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,386 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
GPA804DT-TPDIODE GPP 8A D2PAK Micro Commercial Co |
3,097 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 8A | -65°C ~ 150°C | 1.1 V @ 8 A | |
|
|
MUR105S R5GDIODE GEN PURP 50V 1A DO214AA Taiwan Semiconductor Corporation |
3,328 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 50 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | |
|
BYM07-400-E3/98DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
4,380 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
|
GPA805DT-TPDIODE GPP 8A D2PAK Micro Commercial Co |
3,347 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 150°C | 1.1 V @ 8 A | |
|
|
MUR105SHR5GDIODE GEN PURP 50V 1A DO214AA Taiwan Semiconductor Corporation |
2,752 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 2 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 875 mV @ 1 A | |
|
RS3MCFast Recovery SMC 1KV 3A NextGen Components |
321,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMC | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
|
NSVBAS70LT1GDIODE SCHOTTKY 70V 70MA SOT23-3 onsemi |
2,850 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA (DC) | -55°C ~ 150°C | 1 V @ 15 mA | |
|
S3T-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
411,000 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1300 V | 1300 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A | |
|
FT2000KBFast Rect., 100V, 20.00A, 200ns DComponents |
196,028 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 100 V | 100 V | 20A | -50°C ~ 150°C | 960 mV @ 20 A |
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