| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RGP10DE-031E3/93RECTIFIER Vishay General Semiconductor - Diodes Division |
3,161 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
RS1ML RFGDIODE GEN PURP 800MA SUB SMA Taiwan Semiconductor Corporation |
2,701 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
RGP10DE-052E3/91RECTIFIER Vishay General Semiconductor - Diodes Division |
2,022 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
RS2A R5GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
2,009 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
TVR06D-E3/54RECTIFIER Vishay General Semiconductor - Diodes Division |
3,980 | - |
RFQ |
Datasheet |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA |
|
RS2B R5GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,871 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
1N5397BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 A @ 600 V | 600 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
MA3Z7920GLDIODE SCHOTTKY 30V 100MA SMINI3 Panasonic Electronic Components |
1,594 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | 2 ns | 15 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 550 mV @ 100 mA | |
|
PAD5DFN 8LDIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc. |
41,721 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | PAD-DFN | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 1.5pF @ 5V, 1MHz | - | 5 pA @ 20 V | 30 V | 10mA | -55°C ~ 150°C | 1.5 V @ 5 mA |
|
FES10GULTRAFAST RECTIFIER Rochester Electronics, LLC |
48,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 140pF @ 4V, 1MHz | 30 ns | 5 µA @ 400 V | 400 V | 10A | -55°C ~ 175°C | 1.2 V @ 10 A | |
|
TUAS8J M3G8A, 600V, STANDARD RECOVERY RECT Taiwan Semiconductor Corporation |
2,929 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 62pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
VS-AZH3106FP-M3DIODE GEN PURP 600V 30A TO3PF Vishay General Semiconductor - Diodes Division |
295 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 19pF @ 600V, 1MHz | 90 ns | 10 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 175°C | 2.15 V @ 30 A |
|
1N5392BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
RB168LAM-30TFTRAUTOMOTIVE SCHOTTKY BARRIER DIOD Rohm Semiconductor |
1,484 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 nA @ 30 V | 30 V | 1A | 150°C (Max) | - |
|
JPAD10 TO-92 2LDIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc. |
1,000 | - |
RFQ |
Datasheet |
Bulk | PAD | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 1.5pF @ 5V, 1MHz | - | 10 pA @ 20 V | 35 V | 10mA | -55°C ~ 150°C | 1.5 V @ 5 mA |
|
MBR2045CTRECTIFIER DIODE, SCHOTTKY, 1 PHA Rochester Electronics, LLC |
4,801 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
TUAS8K M3G8A, 800V, STANDARD RECOVERY RECT Taiwan Semiconductor Corporation |
2,725 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 54pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
TRS4A65F,S1QPB-F DIODE TO-220-2L V=650 IF=4A Toshiba Semiconductor and Storage |
204 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 16pF @ 650V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.6 V @ 4 A | ||
|
1N5391BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
SMMBD770T1GDIODE SCHOTTKY 70V 200MA SC70-3 onsemi |
105,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1pF @ 20V, 1MHz | - | 200 nA @ 35 V | 70 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 10 mA |