| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S3W-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
2,952 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1600 V | 1600 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A | |
|
SK12E3/TR13SK12E3/TR13 WEC |
3,510 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 1A | -65°C ~ 175°C | 450 mV @ 1 A | ||
|
HS3JB R5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,550 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
TRS4E65F,S1QPB-F DIODE TO-220-2L V=650 IF=4A Toshiba Semiconductor and Storage |
190 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 16pF @ 650V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.6 V @ 4 A | ||
|
NSVR0320XV6T1GNSVR0320 - 23 V, 1.0 A LOW VF SC Rochester Electronics, LLC |
20,000 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 5V, 1MHz | - | 50 µA @ 15 V | 23 V | 1A (DC) | -55°C ~ 150°C | 270 mV @ 10 mA |
|
ACDBAT340-HFDIODE SCHOTTKY 40V 3A 2010 Comchip Technology |
1,282 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 180pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
TVR06D-E3/73RECTIFIER Vishay General Semiconductor - Diodes Division |
3,414 | - |
RFQ |
Datasheet |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA |
|
70HF100DO5 70 AMP SILICON RECTFIER KK Solid State Inc. |
480 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 200 µA @ 1000 V | 1000 V | 70A | -65°C ~ 150°C | 1.3 V @ 70 A | |
|
|
MBR5H60AFC_R1_00001SMAF-C, SKY Panjit International Inc. |
2,970 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 225pF @ 4V, 1MHz | - | 5 µA @ 60 V | 60 V | 5A | -55°C ~ 175°C | 750 mV @ 5 A | |
|
RS2D R5GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,457 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
SE30PAG-M3/IDIODE GEN PURP 400V 3A DO221BC Vishay General Semiconductor - Diodes Division |
13,870 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.3 µs | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.16 V @ 3 A |
|
TVR06G-E3/54RECTIFIER Vishay General Semiconductor - Diodes Division |
3,043 | - |
RFQ |
Datasheet |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA |
|
IDP18E120XKSA1DIODE GEN PURP 1.2KV 31A TO220-2 Infineon Technologies |
319 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 195 ns | 100 µA @ 1200 V | 1200 V | 31A (DC) | -55°C ~ 150°C | 2.15 V @ 18 A | |
|
RS2G R5GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
2,845 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
1N5405BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 500 V | 500 V | 3A (DC) | -65°C ~ 175°C | 1 V @ 3 A | |
|
TVR06G-E3/73RECTIFIER Vishay General Semiconductor - Diodes Division |
3,095 | - |
RFQ |
Datasheet |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA |
|
PMEG4010CEAXDIODE SCHOTTKY 40V 1A SOD323 Nexperia USA Inc. |
4,003 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 24pF @ 1V, 1MHz | 1.8 ns | 8 µA @ 40 V | 40 V | 1A | 150°C (Max) | 840 mV @ 1 A |
|
|
RSFAL RFGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,942 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
70HFR10DO5 70 AMP SILICON RECTFIER AK Solid State Inc. |
5,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 200 µA @ 100 V | 100 V | 70A | -65°C ~ 150°C | 1.3 V @ 70 A | |
|
TVR06K-E3/54RECTIFIER Vishay General Semiconductor - Diodes Division |
3,423 | - |
RFQ |
Datasheet |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 600mA | -65°C ~ 175°C | 1.4 V @ 600 mA |