| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSX301LA-30TRDIODE SCHOTTKY 30V 3A PMDT Rohm Semiconductor |
3,387 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A | 150°C (Max) | 420 mV @ 3 A | |
|
US1DHE3/5ATDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,068 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
RGP20AHE3/73DIODE GEN PURP 50V 2A GP20 Vishay General Semiconductor - Diodes Division |
3,177 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 50 V | 50 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
BYV26EGPHE3/54DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,679 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
|
VS-30ETH06PBFDIODE GEN PURP 600V 30A TO220AC Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
FGP10B-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 4V, 1MHz | 35 ns | 2 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 950 mV @ 1 A |
|
RB751G-40T2RDIODE SCHOTTKY 30V 30MA VMD2 Rohm Semiconductor |
2,887 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 2pF @ 1V, 1MHz | - | 500 nA @ 30 V | 30 V | 30mA | 125°C (Max) | 370 mV @ 1 mA | |
|
US1JHE3/5ATDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,543 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
HERAF1007GDIODE GEN PURP 10A 800V IT0-220A Taiwan Semiconductor Corporation |
2,394 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | ||
|
JANTX1N6773RECTIFIER Microchip Technology |
3,562 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 200pF @ 5V, 1MHz | 60 ns | 10 µA @ 480 V | 600 V | 8A (DC) | - | 1.6 V @ 8 A | ||
|
MBR1650HDIODE SCHOTTKY 50V 16A TO220 Taiwan Semiconductor Corporation |
2,625 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | |
|
JANTX1N6774RECTIFIER Microchip Technology |
2,439 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 800 mV | 50 V | 15A (DC) | -65°C ~ 150°C | 1.15 V @ 15 A | ||
|
GPA805DIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation |
2,320 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
JANTX1N6775RECTIFIER Microchip Technology |
2,283 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 800 mV | 100 V | 15A (DC) | -65°C ~ 150°C | 1.15 V @ 15 A | ||
|
SR1503DIODE SCHOTTKY 15A 30V R-6 Taiwan Semiconductor Corporation |
2,457 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 15A (DC) | -55°C ~ 150°C | 550 mV @ 15 A | ||
|
JANTX1N6776RECTIFIER Microchip Technology |
3,436 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 800 mV | 150 V | 15A (DC) | -65°C ~ 150°C | 1.15 V @ 15 A | ||
|
MBRF2060DIODE SCHOTTKY 60V 20A ITO220 Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 60 V | 60 V | 20A (DC) | -55°C ~ 150°C | 820 mV @ 20 A | ||
|
JANTX1N6777RECTIFIER Microchip Technology |
2,734 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 800 mV | 200 V | 15A (DC) | -65°C ~ 150°C | 1.15 V @ 15 A | ||
|
SF33GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,244 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
JANTX1N6778RECTIFIER Microchip Technology |
3,020 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 60 ns | 10 µA @ 320 V | 400 V | 15A | 150°C (Max) | 1.6 V @ 15 A |