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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFAF2004GDIODE GEN PURP 200V 20A ITO220AC Taiwan Semiconductor Corporation |
2,368 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 20A (DC) | -55°C ~ 150°C | 975 mV @ 20 A | ||
|
JANTX1N6779RECTIFIER Microchip Technology |
2,780 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 60 ns | 10 µA @ 480 V | 600 V | 15A | 150°C (Max) | 1.6 V @ 15 A | ||
|
|
MBR1635HDIODE SCHOTTKY 35V 16A TO220 Taiwan Semiconductor Corporation |
2,797 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | |
|
|
JANTX1N6840U3SCHOTTKY DIODE Microchip Technology |
3,646 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | - | 35 V | 10A | -65°C ~ 150°C | 880 mV @ 20 A | ||
|
|
SRA2060DIODE SCHOTTKY 60V 20A TO220AC Taiwan Semiconductor Corporation |
3,836 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 20A (DC) | -55°C ~ 150°C | 700 mV @ 20 A | ||
|
FR153GHDIODE FAST REC 1.5A 200V DO-15 Taiwan Semiconductor Corporation |
2,243 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
JANTX1N6841U3SCHOTTKY DIODE Microchip Technology |
3,709 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | - | 35 V | 10A | -65°C ~ 150°C | 880 mV @ 20 A | ||
|
|
SFAF1608GHDIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A (DC) | -55°C ~ 150°C | 1.7 V @ 16 A | |
|
|
JANTX1N6842U3SCHOTTKY DIODE Microchip Technology |
3,944 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 50 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 900 mV @ 15 A | ||
|
|
HERAF1004GDIODE GEN PURP 10A 300V IT0-220A Taiwan Semiconductor Corporation |
2,277 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 10A (DC) | -55°C ~ 150°C | 1 V @ 10 A | ||
|
|
JANTX1N6864USSCHOTTKY DIODE Microchip Technology |
3,555 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/620 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 80 V | 80 V | 3A | -65°C ~ 125°C | 700 mV @ 3 A | |
|
|
MURF8L60DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
2,943 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.3 V @ 8 A | ||
|
|
JANTX1N6910UTK2SCHOTTKY DIODE Microchip Technology |
2,049 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2000pF @ 5V, 1MHz | - | 1.2 mA @ 15 V | 15 V | 25A | -65°C ~ 150°C | 520 mV @ 25 A | ||
|
|
SFT12GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,417 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
JANTX1N6911UTK2SCHOTTKY DIODE Microchip Technology |
2,937 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 30 V | 30 V | 25A | -65°C ~ 150°C | 540 mV @ 25 A | ||
|
|
HER202GDIODE GEN PURP 2A 100V DO-15 Taiwan Semiconductor Corporation |
2,435 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 1 V @ 2 A | ||
|
|
JANTX1N6911UTK2ASSCHOTTKY DIODE Microchip Technology |
3,362 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | - | 1.2 mA @ 30 V | 30 V | 25A | -65°C ~ 150°C | 540 mV @ 25 A | ||
|
SF61GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,505 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | ||
|
|
JANTX1N6911UTK2CSSCHOTTKY DIODE Microchip Technology |
3,440 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | - | 1.2 mA @ 30 V | 30 V | 25A | -65°C ~ 150°C | 540 mV @ 25 A | ||
|
|
SR102DIODE SCHOTTKY 20V 1A DO-41 Taiwan Semiconductor Corporation |
2,684 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
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