| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DHG5I600PMDIODE GEN PURP 600V 5A TO220ACFP IXYS |
3,879 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 2.2 V @ 5 A | |
|
242NQ030R-1240A, 30V, PRM1-1, POWER MODULES SMC Diode Solutions |
2,886 | - |
RFQ |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 11500pF @ 5V, 1MHz | - | 20 mA @ 30 V | 30 V | 240A | -55°C ~ 150°C | 510 mV @ 240 A | ||
|
|
DSS20-0015BDIODE SCHOTTKY 15V 20A TO220AC IXYS |
276 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 150°C | 450 mV @ 20 A | |
|
MSQ1PGHM3/H1A, 400V, MICROSMP, ESD PROTECTI Vishay General Semiconductor - Diodes Division |
4,400 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 650 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.2 V @ 1 A |
|
HS3KB R5GDIODE GEN PURP 800V 3A DO214AA Taiwan Semiconductor Corporation |
302 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
GP3D020A065BSIC SCHOTTKY DIODE 650V TO247-2 SemiQ |
350 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 835pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 20 A |
|
VS-E5TH3006-M330A, 600V, "H" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
182 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 46 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
240NQ045R-1240A, 45V, PRM1-1, POWER MODULES SMC Diode Solutions |
3,712 | - |
RFQ |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 8000pF @ 5V, 1MHz | - | 20 mA @ 45 V | 45 V | 240A | -55°C ~ 150°C | 610 mV @ 240 A | ||
|
STTH506DDIODE GEN PURP 600V 5A TO220AC STMicroelectronics |
521 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 5A | 175°C (Max) | 1.85 V @ 5 A | |
|
SBRB1045T4GDIODE SCHOTTKY 45V 10A D2PAK onsemi |
1,345 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 840 mV @ 20 A |
|
ES3JBHR5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
104 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A |
|
FFSM2065BSILICON CARBIDE DIODE 650V 20A P onsemi |
2,213 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 866pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 23.4A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
|
HERAF808G C0GDIODE GEN PURP 1KV 8A ITO220AC Taiwan Semiconductor Corporation |
307 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
BY229X-600-E3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A | |
|
MBRB1045DIODE SCHOTTKY 45V 10A D2PAK onsemi |
2,569 | - |
RFQ |
Datasheet |
Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 840 mV @ 20 A |
|
AS3PMHM3/86ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
2,019 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
DGS19-025ASDIODE SCHOTTKY 250V 18A TO252AA IXYS |
2,389 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 250 V | 250 V | 18A | -55°C ~ 175°C | 1.5 V @ 7.5 A | |
|
|
MUR410-TPDIODE GEN PURP 100V 4A DO201AD Micro Commercial Co |
3,885 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
VS-MBR1100TRDIODE SCHOTTKY 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 35pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 1A | -40°C ~ 150°C | 850 mV @ 1 A | |
|
BY229X-600HE3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,651 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 10 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A |