| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTE6162R-1400PRV 150A CATH CASE NTE Electronics, Inc |
3,738 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 5 mA @ 1400 V | 1400 V | 150A | -65°C ~ 190°C | 1.1 V @ 200 A | |
|
RF1501NS3STLDIODE GEN PURP 300V 20A LPDS Rohm Semiconductor |
1,065 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 300 V | 300 V | 20A | 150°C (Max) | 1.5 V @ 20 A | |
|
V12PM15-M3/HDIODE SCHOTTKY TMBS 12A 150V SMP Vishay General Semiconductor - Diodes Division |
291 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 175°C | 1.08 V @ 12 A |
|
LSIC2SD065D16ADIODE SCHOTTKY SIC 650V 16A Littelfuse Inc. |
825 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 730pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 38A (DC) | -55°C ~ 175°C | 1.8 V @ 16 A |
|
1N645DIODE 4 AMP 225V DO35 Solid State Inc. |
3,289 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 200 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
NTE6163R-1400PRV 150A ANODE CASE NTE Electronics, Inc |
3,928 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 5 mA @ 1400 V | 1400 V | 150A | -65°C ~ 190°C | 1.1 V @ 200 A | |
|
FFPF15S60STUDIODE GEN PURP 600V 15A TO220F onsemi |
680 | - |
RFQ |
Datasheet |
Tube | Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Through Hole | - | 35 ns | 100 µA @ 600 V | 600 V | 15A | -65°C ~ 150°C | 2.6 V @ 15 A |
|
BYV27-150-TRDIODE AVALANCHE 165V 2A SOD57 Vishay General Semiconductor - Diodes Division |
975 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 25 ns | 1 µA @ 165 V | 165 V | 2A | -55°C ~ 175°C | 1.07 V @ 3 A | |
|
WNSC101200QSILICON CARBIDE POWER DIODE WeEn Semiconductors |
2,435 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A | |
|
UJ3D06504TS650V 4A SIC SCHOTTKY DIODE G3, T UnitedSiC |
993 | - |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 118pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A |
|
NTE6354R-400 PRV 300 A CATH CASE NTE Electronics, Inc |
3,370 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 40 mA @ 400 V | 400 V | 300A | -40°C ~ 180°C | - | |
|
STPS1545DYDIODE SCHOTTKY 45V 15A TO220AC STMicroelectronics |
1,305 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 45 V | 45 V | 15A | -40°C ~ 175°C | 570 mV @ 15 A |
|
FML-G22SDIODE GEN PURP 200V 10A TO220F Sanken |
352 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 40 ns | 200 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 980 mV @ 10 A | |
|
WNSC101200WQSILICON CARBIDE POWER DIODE WeEn Semiconductors |
1,200 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A | |
|
|
BYV29-300HE3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
DB2J31300LDIODE SCHOTTKY 30V 200MA SMINI2 Panasonic Electronic Components |
3,571 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Discontinued at Digi-Key | Surface Mount | 3.8pF @ 10V, 1MHz | 1.5 ns | 50 µA @ 30 V | 30 V | 200mA | 125°C (Max) | 550 mV @ 200 mA | ||
|
|
APT30S20SGDIODE SCHOTTKY 200V 45A D3 Microchip Technology |
2,671 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | 55 ns | 500 µA @ 200 V | 200 V | 45A | -55°C ~ 150°C | 850 mV @ 30 A | |
|
AS4PMHM3/86ADIODE AVALANCHE 1KV 2.4A TO277 Vishay General Semiconductor - Diodes Division |
2,641 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
DGS9-030ASDIODE SCHOTTKY 300V 11A TO252AA IXYS |
3,192 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.3 mA @ 300 V | 300 V | 11A | -55°C ~ 175°C | 2 V @ 5 A | |
|
DSR6V600D1-13DIODE GEN PURP 600V 6A TO252-3 Diodes Incorporated |
2,037 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | DIODESTAR™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 50 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3 V @ 6 A |