| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYS459B-1500E3/45DIODE GEN PURP 1.5KV 6.5A TO263 Vishay General Semiconductor - Diodes Division |
2,268 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 350 ns | 250 µA @ 1500 V | 1500 V | 6.5A | -55°C ~ 150°C | 1.3 V @ 6.5 A | |
|
|
MUR420DIODE GEN PURP 200V 4A DO201AD Rochester Electronics, LLC |
3,651 | - |
RFQ |
Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
AS4PJHM3/86ADIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,452 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
DGS3-018ASDIODE SCHOTTKY 180V 7A TO252AA IXYS |
2,308 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 180 V | 180 V | 7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
|
UF5408-TPDIODE GEN PURP 1KV 3A DO201AD Micro Commercial Co |
3,185 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
VS-1N5819TRDIODE SCHOTTKY 40V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 1A | -40°C ~ 150°C | 600 mV @ 1 A | |
|
BYS459B-1500SE3/45DIODE GEN PURP 1.5KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,447 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 220 ns | 250 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.35 V @ 6.5 A | |
|
|
APT15D30KGDIODE GEN PURP 300V 15A TO220-2 Microchip Technology |
2,232 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 32 ns | 150 µA @ 300 V | 300 V | 15A | -55°C ~ 150°C | 1.4 V @ 15 A | |
|
AS4PJHM3/87ADIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,819 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
DGS3-025ASDIODE SCHOTTKY 250V 5.4A TO252AA IXYS |
3,399 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 250 V | 250 V | 5.4A | -55°C ~ 175°C | 1.6 V @ 2 A | |
|
|
HER601-TPDIODE GEN PURP 50V 6A R6 Micro Commercial Co |
2,537 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 50 V | 50 V | 6A | -65°C ~ 150°C | 1.1 V @ 6 A | |
|
BYS459F-1500E3/45DIODE GEN PURP 1.5KV 6.5A ITO220 Vishay General Semiconductor - Diodes Division |
2,490 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 350 ns | 250 µA @ 1500 V | 1500 V | 6.5A | -55°C ~ 150°C | 1.3 V @ 6.5 A | |
|
DA3J101A0LDIODE GEN PURP 80V 100MA SMINI3 Panasonic Electronic Components |
2,840 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Surface Mount | 1.2pF @ 0V, 1MHz | 3 ns | 100 nA @ 80 V | 80 V | 100mA (DC) | 150°C (Max) | 1.2 V @ 100 mA | ||
|
|
APT15D40KGDIODE GEN PURP 400V 15A TO220-2 Microchip Technology |
2,729 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 150 µA @ 400 V | 400 V | 15A | -55°C ~ 175°C | 1.5 V @ 15 A | |
|
AS4PKHM3/86ADIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,127 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
DGS3-030ASDIODE SCHOTTKY 300V 5A TO252AA IXYS |
3,447 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 300 V | 300 V | 5A | -55°C ~ 175°C | 2 V @ 2 A | |
|
LXA08FP600DIODE GEN PURP 600V 8A TO220FP Power Integrations |
3,852 | - |
RFQ |
Datasheet |
Tube | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 34 ns | 250 µA @ 600 V | 600 V | 8A | 150°C (Max) | 2.94 V @ 8 A |
|
BYS459F-1500SE3/45DIODE GEN PURP 1.5KV 10A ITO220 Vishay General Semiconductor - Diodes Division |
2,918 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 220 ns | 250 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.35 V @ 6.5 A | |
|
DB3J316K0LDIODE SCHOTTKY 30V 100MA SMINI3 Panasonic Electronic Components |
3,038 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Discontinued at Digi-Key | Surface Mount | 2pF @ 10V, 1MHz | 800 ps | 15 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 550 mV @ 100 mA | |
|
|
APT15S20KGDIODE SCHOTTKY 200V 25A TO220 Microchip Technology |
2,432 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | 80 ns | 250 µA @ 200 V | 200 V | 25A | -55°C ~ 150°C | 830 mV @ 15 A |