| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
60S6-TPDIODE GEN PURP 600V 6A DO201AD Micro Commercial Co |
360 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
S1DL RVGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
151 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SBR8E45P5-7DIODE RECT SBR 45V 8A POWERDI5 Diodes Incorporated |
461 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 350 µA @ 45 V | 45 V | 8A | -55°C ~ 150°C | 510 mV @ 8 A |
|
2CL71AUF Rect, 8000V, 0.005A, 80ns DComponents |
6,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 80 ns | 2 µA @ 8000 V | 8000 V | 5mA | -40°C ~ 120°C | 36 V @ 10 mA | |
|
ES3JB R5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
155 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A | |
|
SF13-BULKSUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
SDURF15Q60TB600V FRD,15A,PACKAGE ITO-220AC SMC Diode Solutions |
311 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 20 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 2 V @ 15 A | |
|
BAQ33-GS18DIODE GEN PURP 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
151 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Last Time Buy | Surface Mount | 3pF @ 0V, 1MHz | - | 1 nA @ 15 V | 30 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
RB050L-40DDTE25DIODE SCHOTTKY 40V 3A PMDS Rohm Semiconductor |
437 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 3A | 125°C (Max) | 550 mV @ 3 A |
|
MUR460FFGRECTIFIER DIODE, 4A, 600V, DO-20 Rochester Electronics, LLC |
89,870 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
BA158BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
13,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
MBR1035HE3/45DIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,786 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
DA2J10700LDIODE GEN PURP 300V 100MA SMINI2 Panasonic Electronic Components |
3,127 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Surface Mount | 3pF @ 6V, 1MHz | 60 ns | 1 µA @ 300 V | 300 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | ||
|
|
VS-18TQ050PBFDIODE SCHOTTKY 50V 18A TO220AC Vishay General Semiconductor - Diodes Division |
3,278 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2.5 mA @ 50 V | 50 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | ||
|
MDO1200-22N1DIODE GEN PURP 2.2KV Y1-CU IXYS |
3,008 | - |
RFQ |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | - | 2200 V | - | - | - | ||
|
BYD13KGPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
MBR1045HE3/45DIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,006 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
DA2S10400LDIODE GEN PURP 80V 200MA SSMINI2 Panasonic Electronic Components |
3,414 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Surface Mount | 4pF @ 0V, 1MHz | 10 ns | 500 nA @ 80 V | 80 V | 200mA | 150°C (Max) | 1.1 V @ 200 mA | |
|
|
VS-20ETF04PBFDIODE GEN PURP 400V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,049 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
DA121TT1GDIODE GEN PURP 80V 200MA SC75 onsemi |
668,700 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 150 mA |