| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYD13MGP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
|
MBR1050-E3/45DIODE SCHOTTKY 50V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,872 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
DB2440400LDIODE SCHOTTKY 40V 3A TMINIP2 Panasonic Electronic Components |
3,347 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 85pF @ 10V, 1MHz | 30 ns | 50 µA @ 40 V | 40 V | 3A | 125°C (Max) | 530 mV @ 3 A | ||
|
VS-30CPF02PBFDIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,122 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
MS106/TR12DIODE SCHOTTKY 60V 1A DO204AL Microchip Technology |
3,569 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 690 mV @ 1 A | |
|
MUR105RLGDIODE GEN PURP 50V 1A AXIAL onsemi |
19,451 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 2 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
BYD13MGPHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | - | |
|
|
MBR1050HE3/45DIODE SCHOTTKY 50V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,678 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
DB2441600LDIODE SCHOTTKY 40V 3A TMINIP2 Panasonic Electronic Components |
2,958 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 95pF @ 10V, 1MHz | 30 ns | 300 µA @ 40 V | 40 V | 3A | 125°C (Max) | 450 mV @ 3 A | ||
|
VS-30CPF06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
MS106E3/TR12DIODE SCHOTTKY 60V 1A DO204AL Microchip Technology |
3,920 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 690 mV @ 1 A | |
|
STB20100TRDIODE SCHOTTKY 100V D2PAK SMC Diode Solutions |
248 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 100 V | 100 V | - | -55°C ~ 150°C | 750 mV @ 20 A | |
|
PMEG4010AESBYLDIODE SCHOTTKY 40V 1A SOD993 Nexperia USA Inc. |
128 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 75pF @ 1V, 1MHz | 3.1 ns | 1250 µA @ 40 V | 40 V | 1A | 150°C (Max) | 505 mV @ 1 A | |
|
S3BB R5GDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
370 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
MUR460FFGRECTIFIER DIODE, 4A, 600V, DO-20 Rochester Electronics, LLC |
4,000 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
FR105BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SBRT25U60SLP-13DIODE SBR 60V 25A POWERDI5060-8 Diodes Incorporated |
567 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchSBR | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 25A | -55°C ~ 150°C | 550 mV @ 25 A |
|
|
TSD1G1A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | - | |
|
S3JB R5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
365 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
EGP30ARECTIFIER DIODE, 3A, 50V, DO-201 Rochester Electronics, LLC |
3,800 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 95pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |