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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFN10BGE3STLRFN10BGE3S IS THE SILICON EPITAX Rohm Semiconductor |
978 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 350 V | 350 V | 10A | 150°C | 1.5 V @ 10 A | |
|
CS2G-E3/IDIODE GPP 2A 400V DO-214AA SMB Vishay General Semiconductor - Diodes Division |
310 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 400 V | 400 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
SB560-E3/73DIODE SCHOTTKY 60V 5A DO201AD Vishay General Semiconductor - Diodes Division |
789 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | |
|
ES1JSF Rect, 600V, 1.00A, 35ns DComponents |
450,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.7 V @ 1 A | |
|
BYD13DBULKDIODE AVALANCHE 200V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1.4A | 175°C | 1.05 V @ 1 A | |
|
SK310A-LTPDIODE SCHOTTKY 100V 3A DO214AC Micro Commercial Co |
4,300 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 3A | -50°C ~ 125°C | 850 mV @ 3 A | |
|
SDURF20Q60CT600V20AUFRPACKAGE ITO-220AB SMC Diode Solutions |
1,000 | - |
RFQ |
Tube | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | ||
|
MUR210GDIODE GEN PURP 100V 2A AXIAL onsemi |
254 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 940 mV @ 2 A |
|
CMR3-02 TR13 PBFREEDIODE GEN PURP 200V 3A SMC Central Semiconductor Corp |
507 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A | |
|
SS32RECTIFIER DIODE, SCHOTTKY, 3A, 2 Rochester Electronics, LLC |
168,219 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A | |
|
|
BYD33GBULKDIODE AVALANCHE 400V 1.3A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 1 µA @ 400 V | 400 V | 1.3A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
MURS120T3GDIODE GEN PURP 200V 2A SMB onsemi |
2,475 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | |
|
TST30L45CW C0GDIODE SCHOTTKY 45V 15A TO220AB Taiwan Semiconductor Corporation |
906 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 550 mV @ 15 A | |
|
SF24GTADIODE GEN PURP 200V 2A DO15 SMC Diode Solutions |
245 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
FMN-G12SDIODE GEN PURP 200V 5A TO220F-2L Sanken |
466 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 100 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 920 mV @ 5 A | |
|
HER506T/RDIODE GEN PURP 600V 5A DO201AD EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -65°C ~ 150°C | 1.7 V @ 5 A | |
|
BYD33KGPHE3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 300 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | - | |
|
MBR10H90-E3/45DIODE SCHOTTKY 90V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,714 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 90 V | 90 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
|
1N3611GPHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,129 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
STPS3045FPDIODE SCHOTTKY 45V 30A TO220FPAC STMicroelectronics |
3,504 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 300 µA @ 45 V | 45 V | 30A | 175°C (Max) | 620 mV @ 30 A |
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