| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAT30KFILMDIODE SCHOTTKY 30V 300MA SOD523 STMicroelectronics |
3,118 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 22pF @ 0V, 1MHz | - | 5 µA @ 30 V | 30 V | 300mA (DC) | 150°C (Max) | 530 mV @ 300 mA | |
|
ST30100DIODE SCHOTTKY 100V TO220AC SMC Diode Solutions |
856 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | - | -55°C ~ 150°C | 750 mV @ 30 A | |
|
ES1GTRDIODE GEN PURP 400V 1A SMA SMC Diode Solutions |
188 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SBRFP10U60D1-13SUPERBARRIERRECTIFIERTO252T&R2.5 Diodes Incorporated |
210 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | 50 ns | 200 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 520 mV @ 10 A | |
|
EGP30BRECTIFIER DIODE, 3A, 100V, DO-20 Rochester Electronics, LLC |
2,400 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 95pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A | |
|
BYG20JSF 1.5A, CASE TYPE: SMA-L EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
VS-10BQ040-M3/5BTDIODE SCHOTTKY 40V 1A SMB Vishay General Semiconductor - Diodes Division |
2,163 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 5V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A | |
|
BYV29B-500,118DIODE GEN PURP 500V 9A D2PAK WeEn Semiconductors |
400 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
1N4003G-TDIODE GEN PURP 200V 1A DO41 Diodes Incorporated |
182 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
|
UF5407-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
166 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
AR2502DIODE GEN PURP 200V 25A MICRODE EIC SEMICONDUCTOR INC. |
1,500 | - |
RFQ |
Datasheet |
Bag | Automotive | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 25A | -65°C ~ 175°C | 1 V @ 25 A |
|
1N5818BULKDIODE SCHOTTKY 30V 1A DO41 EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
RR1LAM4STRDIODE GEN PURP 400V 1A PMDTM Rohm Semiconductor |
3,462 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | 150°C (Max) | 1.1 V @ 1 A | |
|
RFUS10TF4SDIODE GEN PURP 430V 10A TO220NFM Rohm Semiconductor |
1,378 | - |
RFQ |
Datasheet |
Tube,Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 430 V | 10A | 150°C (Max) | - | |
|
|
S15DLWHRVGDIODE GEN PURP 200V 1.5A SOD123W Taiwan Semiconductor Corporation |
179 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
|
MBRM120ET3GDIODE SCHOTTKY 20V 1A POWERMITE onsemi |
3,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 530 mV @ 1 A | |
|
SGL1-50SchottkyD, 50V, 1A DComponents |
12,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 670 mV @ 1 A | |
|
1N5819BULKDIODE SCHOTTKY 40V 1A DO41 EIC SEMICONDUCTOR INC. |
3,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
1N3957GP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
BYW27-200GP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,860 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |