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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK310AE3/TR13DIODE SCHOTTKY 3A 100V SMAJ Microchip Technology |
2,453 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
MBR16H50HE3/45DIODE SCHOTTKY 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,915 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 50 V | 50 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
1N4001GPHE3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYX10GP-E3/73DIODE GEN PURP 1.6KV 360MA DO204 Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1600 V | 1600 V | 360mA | -65°C ~ 175°C | 1.6 V @ 2 A | |
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|
VSB2200S-M3/54DIODE SCHOTTKY 200V 2A DO204AL Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 40 µA @ 200 V | 200 V | 2A | -40°C ~ 150°C | 1.23 V @ 2 A |
|
VS-20ETF10FPPBFDIODE GEN PURP 1KV 20A TO220FP Vishay General Semiconductor - Diodes Division |
2,228 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | ||
|
SK310B/TR13DIODE SCHOTTKY 100V 3A SMB Microchip Technology |
2,989 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 3A | -55°C ~ 125°C | 850 mV @ 3 A | |
|
|
MBR16H60-E3/45DIODE SCHOTTKY 60V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,262 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | |
|
DFLU1200-7DIODE GP 200V 1A POWERDI123 Diodes Incorporated |
2,820 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 27pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 980 mV @ 1 A | |
|
SK515C V7GDIODE SCHOTTKY 5A 150V DO-214AB Taiwan Semiconductor Corporation |
786 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |
|
PMEG3005ESFYLDIODE SCHOTTKY 30V 0.5A SOD962 Nexperia USA Inc. |
163 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 21pF @ 1V, 1MHz | 1.42 ns | 9 µA @ 30 V | 30 V | 500mA | 150°C (Max) | 720 mV @ 500 mA | |
|
BYG20D R3GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
905 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
BY133-CTCUT-TAPE VERSION. STANDARD RECO DComponents |
4,945 | - |
RFQ |
Datasheet |
Strip | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 1300 V | 1300 V | 1A | -50°C ~ 175°C | 1.3 V @ 1 A | |
|
FR304BULKDIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,500 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
SK520BTRDIODE SCHOTTKY 200V 5A SMB SMC Diode Solutions |
3,713 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A | |
|
BYW29ED-200,118DIODE GEN PURP 200V 8A DPAK WeEn Semiconductors |
112 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | 150°C (Max) | 1.3 V @ 20 A | |
|
RMPG06D-E3/54DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
149 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
STPS1L30MDIODE SCHOTTKY 30V 1A STMITE STMicroelectronics |
215 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 390 µA @ 30 V | 30 V | 1A | 150°C (Max) | 390 mV @ 1 A | |
|
|
RGP02-20E-BULKFAST RECOVERY HIGH VOLTAGE; CASE EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 150°C | 1.8 V @ 100 mA | |
|
|
BYD13KBULKDIODE AVALANCHE 800V 1.4A DO41 EIC SEMICONDUCTOR INC. |
2,000 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 800 V | 800 V | 1.4A | 175°C | 1.05 V @ 1 A |
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