| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK33AE3/TR13DIODE SCHOTTKY 30V 3A SMB Microchip Technology |
2,626 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
RBR3MM40ATFTRDIODE (RECTIFIER FRD) 40V-VR 3A- Rohm Semiconductor |
420 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 80 µA @ 40 V | 40 V | 3A | 150°C (Max) | 620 mV @ 3 A |
|
SDURB820TRDIODE GEN PURP 200V 8A D2PAK SMC Diode Solutions |
383 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.2 V @ 8 A | |
|
SK36SchottkyD, 60V, 3A DComponents |
468,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 60 V | 60 V | 3A | -50°C ~ 150°C | 750 mV @ 3 A | |
|
|
1N5408RLGDIODE GEN PURP 1000V 3A DO201AD onsemi |
119,483 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |
|
EGP20CRECTIFIER DIODE, 2A, 150V, DO-15 Rochester Electronics, LLC |
15,091 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A | |
|
MBRB760-E3/81DIODE SCHOTTKY 60V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
784 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 7.5A | -65°C ~ 150°C | 750 mV @ 7.5 A | |
|
BAT46WH,115DIODE SCHOT 100V 250MA SOD123F Nexperia USA Inc. |
385 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 39pF @ 0V, 1MHz | 5.9 ns | 9 µA @ 100 V | 100 V | 250mA (DC) | 150°C (Max) | 850 mV @ 250 mA | |
|
SDURK10Q60TB600V FRD,10A,PACKAGE ITO-220AC-2 SMC Diode Solutions |
307 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 2.3 V @ 10 A | |
|
SK35SchottkyD, 50V, 3A DComponents |
36,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 750 mV @ 3 A | |
|
MURA120T3GDIODE GEN PURP 200V 2A SMA onsemi |
2,880 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 1A (DC) | -65°C ~ 175°C | 875 mV @ 1 A | |
|
1N4005E-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,263 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
EGP10DHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,439 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
1N5627GP-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,408 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
VS-60EPF02PBFDIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,721 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
SK33B/TR13DIODE SCHOTTKY 30V 3A SMB Microchip Technology |
2,380 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
1N4005GPE-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,738 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SD107WS-AU_R1_000A1SOD-323, SKY Panjit International Inc. |
4,787 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 10V, 1MHz | - | 1 µA @ 25 V | 30 V | 200mA | -55°C ~ 150°C | 800 mV @ 100 mA |
|
ES3J V7GDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
410 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
EGP10F-E3/73DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,552 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |