| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSR2030DMXTAGNSR2030 - 2A, 30V SCHOTTKY HALF Rochester Electronics, LLC |
3,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BYM10-400-E3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,954 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
EAL1MSF Rect, 1000V, 1.00A, 75ns DComponents |
20,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 3 µA @ 1000 V | 1000 V | 1A | -50°C ~ 175°C | 1.8 V @ 1 A | |
|
BYT56M-TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
630 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
V3PM15-M3/HSCHOTTKY RECTIFIER 3A 150V SMP Vishay General Semiconductor - Diodes Division |
276 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 1.8A | -40°C ~ 175°C | 760 mV @ 1.5 A |
|
|
ES2BA R3GDIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
111 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
EGP30DRECTIFIER DIODE, 3A, 200V, DO-20 Rochester Electronics, LLC |
1,797 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 95pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A | |
|
MURS160T3GDIODE GEN PURP 600V 2A SMB onsemi |
3,814 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
S1WST Rect, 1600V, 1A DComponents |
877,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1600 V | 1600 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
CMSH2-60 TR13 PBFREEDIODE SCHOTTKY 60V 2A SMB Central Semiconductor Corp |
552 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A | |
|
EM01AV1DIODE GEN PURP 600V 1A AXIAL Sanken |
245 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
MUR360SB R5GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
972 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
P600KStd Rect, 800V, 6A DComponents |
145,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 800 V | 800 V | 6A | -50°C ~ 175°C | 1.1 V @ 6 A | |
|
SBR1U200P1-7DIODE SBR 200V 1A POWERDI123 Diodes Incorporated |
2,206 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | 25 ns | 50 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 820 mV @ 1 A |
|
SM5406ST Rect, 600V, 3A DComponents |
4,970 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 175°C | 1.2 V @ 3 A | |
|
RFUH10NS6SFHTLFAST RECOVERY DIODES (CORRESPOND Rohm Semiconductor |
809 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 157pF @ 0V, 1MHz | 25 ns | 10 µA @ 600 V | 600 V | 10A | 150°C (Max) | 2.8 V @ 10 A |
|
US1G-TPDIODE GEN PURP 400V 1A DO214AC Micro Commercial Co |
244 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.4 V @ 1 A | |
|
HER208G A0GDIODE GEN PURP 1KV 2A DO204AC Taiwan Semiconductor Corporation |
977 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
PMEG045T150EPDAZNEXPERIA PMEG045T150EPD - 45 V, Rochester Electronics, LLC |
94,300 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 10V, 1MHz | 20 ns | 100 µA @ 45 V | 45 V | 15A | 175°C (Max) | 550 mV @ 15 A |
|
SD1206S040S2R0DIODE SCHOTTKY 40V 2A 1206 KYOCERA AVX |
3,590 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A (DC) | -55°C ~ 125°C | 500 mV @ 2 A |